4.5 Article

Negative differential resistance behaviour with high PVR value in (CH3)2NH2Fe(HCOO)3-A multiferroic MOF

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DOI: 10.1016/j.mseb.2023.116534

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Negative differential resistance; Metal organic frameworks; F -N tunnelling; Electron transport mechanism

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We demonstrate the nonlinear resistance behavior of multiferroic MOF (CH3)2NH2Fe(HCOO)3 crystals with a high peak to valley ratio. The phase pure millimeter-sized crystals were grown using a hydrothermal process. Magnetic and dielectric measurements confirmed the multiferrioc conduction of the crystals, with a paramagnetic-antiferromagnetic transition at TN = 19 K and a paraelectric-ferroelectric transition at Tc = 171 K. The conduction mechanism was studied through current-voltage characteristics measurements from 100 K to 250 K, with the largest peak to valley ratio of 47 observed at 140 K. This high peak to valley ratio was explained based on onsite coulomb interactions in a 1D Hubbard model.
We present the NDR behaviour for multiferroic MOF (CH3)2NH2Fe(HCOO)3 crystals with a high peak to valley ratio. The phase pure millimetre sized crystals were grown using hydrothermal process. The multiferrioc conduct of the crystals were confirmed through magnetic and dielectric characteristic measurements, displaying a paraantiferro magnetic transition with TN = 19 K and a para-electric to ferroelectric type dielectric transition at Tc = 171 K. The electronic conduction mechanism was studied through current-voltage I(V) characteristic measurements carried out in temperature range from 100 K to 250 K. The largest peak to valley ratio of 47 was observed at 140 K. This high peak to valley ratio was explained on the basis of onsite coulomb interactions in 1D Hubbard model.

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