Self-driven and thermally resilient highly responsive nano-fenced MoS2 based photodetector for near-infrared optical signal

Transition-metal-dichalcogenides-based near-infrared photodetectors have attracted significant attention because of their applicability in various sectors, such as consumer electronics, biomedical imaging systems, night vision cameras, and spectroscopic analyses. However, the thermal stability of detectors based on metal dichalcogenides is an obstacle to their commercialization. We have addressed this dilemma by directly depositing a nano fence-like Molybdenum di-sulphide (nf-MoS2) thin film on the Silicon-Nitride substrate via a sputtering technique. The self-driven (zero applied bias) behaviour of the designed device was confirmed by rectifying behaviour. Figure-of-merit parameters validate the enormous photo-response of the fabricated nf-MoS2-based device, i.e., responsivity (1358 mAW-1), detectivity (2.8x1010 Jones), noise-equivalent-power (4.5x10- 13 WHz- 1/2), and quantum efficiency (476%). The thermal stability of the fabricated device was assessed at a high operating temperature (100 degrees C), exhibiting stable photo-switching characteristics at 0 V bias and 2 & mu;W optical light illuminations with a gigantic responsivity of 1170 mAW-1. Developing a near-infrared photodetector using nf-MoS2 thin film paves the way for the self-driven, highly responsive, near-infrared, thermally reliable sensor for futuristic optoelectronic applications.

Automated summary

Transition-metal-dichalcogenides-based near-infrared photodetectors are widely studied due to their applications in various sectors. However, the thermal stability of these detectors hampers their commercialization. In this study, we have solved this problem by depositing a nano fence-like Molybdenum di-sulphide thin film on a Silicon-Nitride substrate. The fabricated device shows self-driven behavior and exhibits enormous photo-response and thermal stability.