期刊
MATERIALS CHEMISTRY AND PHYSICS
卷 303, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.matchemphys.2023.127827
关键词
Thin thermally evaporatedSnxSb2-xSe3 films; FE-SEM; EDX; XRD; Optical and physicochemical properties; Refractive index and electronic polarizability; p-type semiconductor
This research aims to prepare novel thin SnxSb2-xSe3 films, TSSe, with varying Sn-content through thermal evaporation. Field-emission scanning electron microscope was used to study the surface properties of these films, while X-ray diffraction revealed their polycrystalline nature with an orthorhombic structure. Optical characteristics were analyzed through transmission and reflection spectrophoto-metric measurements. The investigation of various parameters and properties indicated that these films can be utilized in a wide range of optical applications.
This research work is allocated to prepare the novel thin SnxSb2-xSe3 films, TSSe by thermal evaporation pro-cedure at various Sn-content, where 0 <= x <= 2 at.%. The field-emission scanning electron microscope has been used to investigate the surface nature of these SnxSb2-xSe3 films. X-ray diffraction revealed that all TSSe films disclosed that the films have the polycrystalline nature with the orthorhombic structure without regard to the Sn-content. The optical characteristics of these layers were studied via transmission and reflection spectrophoto-metric measurements. The Archimedes' principle has been used to measure the density of samples, which was found that its values increase from 5.766 gm/cm3 to 6.136 gm/cm3. Along with, the molar volume decreases from 83.316 cm3/mol to 77.291 cm3/mol. The optical energy gap investigation of thin SnxSb2-xSe3 layers indicated that these layers exposed a direct allowed electronic transition. The optical band-gap energy reduces from 1.191 eV to 1.050 eV, while the band tail width increases from 0.093 eV to 0.155 eV by boosting the Sn-content. Impact of Sn-content on the linear optical parameters also refers to increasing the absorption coefficient, refractive index (from 3.2086 to 3.3317), molar refraction (from 0.756 to 0.771), the interaction strength be-tween the electrons and photons (from 2.439 to 4.065). On the contrary, the steepness parameter, reflection factor, and electronic polarizability decrease as Sn-percentages increase from 0.0 to 2.0 at%. In addition, many other parameters have been discussed, like the optical conductivity, the real and imaginary parts of the dielectric indices, some nonlinear optical parameters, and the semiconductor-type of these films, which detect that they are p-type semiconductors. The investigated parameters and properties showed that these films can be used in many optical applications, like solar cells, photodetectors, batteries, memory devices, and others.
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