Improved Cu/Sn interface reliability using double-layer stacked nano-twinned Cu

The immoderate growth of intermetallic compound (IMC) at the Cu/Sn bonding interface reduces the reliability of bonding joints, leading to the failure of high-density packaging. Herein, we design a double-layer nanotwinned Cu (d-ntCu) structure composed of the perpendicularly aligned nano-twinned Cu (p-ntCu) as the upper layer and horizontally aligned nano-twinned Cu (h-ntCu) as the lower layer. We study the Cu/Sn bonding interface microstructure evolution to reveal the IMC growth inhibition and void suppression ability of d-ntCu. As a comparison, the interface microstructure evolution of single layer h-ntCu/Sn is also studied. After thermal aging, the growth mode of IMC at the Cu/Sn bonding interface can be divided into two stages, which are caused by the in-situ annealing of the p-ntCu. In the initial stage of aging, the main diffusion path of Cu atoms is twin boundary diffusion, causing a rather fast growth of IMC. After 100 h aging, the twins anneal into large grains, which induce a lower growth rate of IMC due to the bulk diffusion of Cu atoms. Compared with the h-ntCu single layer, the IMC thickness of the d-ntCu is suppressed by 20%. Besides, the bonding interface in d-ntCu/Sn is void-free due to the vacancy-sink effect of twin boundaries. Therefore, using d-ntCu as the substrate can not only control the IMC growth rate but also suppress the formation of voids during aging, which is helpful to achieve high bonding reliability.

Automated summary

In this study, a double-layer nanotwinned Cu structure was designed to inhibit the growth of IMC and the formation of voids at the Cu/Sn bonding interface, improving the bonding reliability.