4.6 Article

Accurate and Wide-Voltage-Range Modeling of Electrowetting with a Lattice Boltzmann Approach

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Summary: A full three-dimensional mechanistic model based on the multiphonon trap-assisted tunneling theory is presented for calculating time-dependent dielectric breakdown (TDDB) in polycrystalline thin films. The model considers the intrinsic three-dimensional discreteness of traps at the dielectric grain boundaries and solves the coupled three-dimensional master equation and Poisson equation for leakage current density calculation. The generated trap is determined by local temperature and electric field, and the net phonon emission associated with each charge trapping and release event is treated as a local point heat source. The model successfully reproduces experimental leakage current density-voltage characteristics and the Weibull distribution of time to breakdown at different dielectric thicknesses, stress voltages, and environmental temperatures.

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