Stages of self-arrangement in growth of nanostructured graphene films related to the flow of ionized species during plasma-enhanced chemical vapor deposition

The ability to directly deposit graphene layers on diverse substrates (including the ones with existing functioning electronic devices) is a very attractive method for integrating two-dimensional materials into electronic systems based on typical semiconductors. However, the task is highly challenging due to the high temperatures required for synthesis of the graphene structures. Plasma-enhanced chemical vapor deposition is an option that can be used to produce large-area graphene layers at sufficiently low temperatures. A lack of deep understanding of the plasma-associated processes limits the ability to directly control graphene growth. In this study, we experimentally investigated how the density of the ionized species flow influences the growth of the nanostructured graphene layers using a custom process chamber layout. The relationship between the growth of the nanostructured carbon-based films and the flow of the ionized species of the working gas mixture was quantitatively characterized for a set of specific parameters. We also analyzed the influence of deposition time and substrate temperature on the growth of the films and discuss the driving mechanisms. Three unique stages were identified in the self-arrangement of the layer. The activation energy of the process was similar to 0.31 eV.

Automated summary

The ability to directly deposit graphene layers on diverse substrates at high temperatures is very attractive for integrating two-dimensional materials into electronic systems. In this study, we investigated the influence of ionized species flow density on the growth of nanostructured graphene layers using a custom process chamber layout. The relationship between growth and ionized species flow, as well as the effects of deposition time and substrate temperature, were quantitatively characterized. Three unique stages were identified in the self-arrangement of the layers, and the activation energy of the process was determined to be around 0.31 eV.