相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Projected Cost of Gallium Oxide Wafers from Edge-Defined Film-Fed Crystal Growth
Karen N. Heinselman et al.
CRYSTAL GROWTH & DESIGN (2022)
Progress in state-of-the-art technologies of Ga2O3 devices
Chenlu Wang et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2021)
Performance and reliability of β-Ga2O3 Schottky barrier diodes at high temperature
Karen Heinselman et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2021)
Electrical and chemical analysis of Ti/Au contacts to β-Ga2O3
Luke A. M. Lyle et al.
APL MATERIALS (2021)
Accelerated Aging Stability of beta-Ga2O3-Titanium/Gold Ohmic Interfaces
Ming-Hsun Lee et al.
ACS APPLIED MATERIALS & INTERFACES (2020)
Quasi-two-dimensional -Ga2O3 field effect transistors with large drain current density and low contact resistance via controlled formation of interfacial oxygen vacancies
Zhen Li et al.
NANO RESEARCH (2019)
Interfacial reactions of titanium/gold ohmic contacts with Sn-doped β-Ga2O3
Ming-Hsun Lee et al.
APL MATERIALS (2019)
Investigation of the Mechanism for Ohmic Contact Formation in Ti/Al/Ni/Au Contacts to β-Ga2O3 Nanobelt Field-Effect Transistors
Jin-Xin Chen et al.
ACS APPLIED MATERIALS & INTERFACES (2019)
Chemical Reactions Impede Thermal Transport Across Metal//iGa2O3 Interfaces
Henry T. Aller et al.
NANO LETTERS (2019)
A review of Ga2O3 materials, processing, and devices
S. J. Pearton et al.
APPLIED PHYSICS REVIEWS (2018)
beta-Ga2O3 for wide-bandgap electronics and optoelectronics
Zbigniew Galazka
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2018)
Investigation of Different Metals as Ohmic Contacts to β-Ga2O3: Comparison and Analysis of Electrical Behavior, Morphology, and Other Physical Properties
Yao Yao et al.
JOURNAL OF ELECTRONIC MATERIALS (2017)
Contacting Mechanically Exfoliated β-Ga2O3 Nanobelts for (Opto)electronic Device Applications
Jinho Bae et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
Ke Zeng et al.
IEEE ELECTRON DEVICE LETTERS (2017)
High-Performance Depletion/Enhancement-Mode β-Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm
Hong Zhou et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Highly conductive nano-sized Magneli phases titanium oxide (TiOx)
Aditya F. Arif et al.
SCIENTIFIC REPORTS (2017)
β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect
Hong Zhou et al.
APPLIED PHYSICS LETTERS (2017)
State-of-the-art technologies of gallium oxide power devices
Masataka Higashiwaki et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2017)
Electrical behavior of β-Ga2O3 Schottky diodes with different Schottky metals
Yao Yao et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2017)
Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain
Man Hoi Wong et al.
APPLIED PHYSICS EXPRESS (2017)
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
Kelson D. Chabak et al.
APPLIED PHYSICS LETTERS (2016)
Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
Man Hoi Wong et al.
IEEE ELECTRON DEVICE LETTERS (2016)
Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
Man Hoi Wong et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics
Janghyuk Kim et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2016)
Communication-A (001) beta-Ga2O3 MOSFET with+2.9 V Threshold Voltage and HfO2 Gate Dielectric
Marko J. Tadjer et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2016)
Measurement of the electrical resistivity and Hall coefficient at high temperatures
Kasper A. Borup et al.
REVIEW OF SCIENTIFIC INSTRUMENTS (2012)
Titanium diffusion in gold thin films
William E. Martinez et al.
THIN SOLID FILMS (2010)
In situ lift-out: Steps to improve yield and a comparison with other FIB TEM sample preparation techniques
R. M. Langford et al.
MICRON (2008)