High-performance copper selenide nanocomposites for power generation

Cu1.97Se-x wt.% In2O3 (x = 0-1) bulk composites are fabricated by combining high-temperature melting and spark plasma sintering technology. The doping of In3+in Cu vacancies tunes the carrier concentration and modifies the band structure of Cu1.97Se. Additionally, excessive In2O3 particles benefit the construction of multiple lattice defects to strengthen phonon scattering and suppress the long-range migration of Cu ions, resulting in obviously reduced thermal conductivity and improved service stability. Ultimately, a peak ZT value of 1.43 is obtained at 873 K for the Cu1.97Se-0.5 wt.% In2O3 bulk specimen, which is almost 150% higher than that of pristine sample. The thermoelectric conversion efficiency and mechanical properties of the composites sample are also measured. The results suggest that Cu1.97Se-based nanocomposites offer potential for use in power generation device assembly.

Automated summary

Cu1.97Se-x wt.% In2O3 (x = 0-1) bulk composites were fabricated using high-temperature melting and spark plasma sintering technology. Doping In3+ in Cu vacancies can adjust the carrier concentration and modify the band structure of Cu1.97Se. Additionally, excessive In2O3 particles help to construct multiple lattice defects, enhance phonon scattering, suppress the migration of Cu ions, and significantly reduce thermal conductivity. A peak ZT value of 1.43 was obtained for the Cu1.97Se-0.5 wt.% In2O3 bulk specimen at 873 K, which is almost 150% higher than that of the pristine sample. The thermoelectric conversion efficiency and mechanical properties of the composites sample were also measured, suggesting the potential use of Cu1.97Se-based nanocomposites in power generation devices.