4.7 Article

High pressure sintering of fully dense tantalum carbide ceramics with limited grain growth

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JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
卷 43, 期 12, 页码 5117-5124

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ELSEVIER SCI LTD
DOI: 10.1016/j.jeurceramsoc.2023.04.032

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Tantalum carbide; High-pressure sintering; Plastic deformation; High hardness; Electrical property

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In this study, TaC ceramics with high density and fine grains were successfully fabricated by high pressure sintering. The as-sintered specimen exhibited a high dislocation density and excellent hardness. Moreover, the electrical conductivity was improved. High pressure sintering was found to be effective in promoting densification and limiting grain growth. This work provides valuable insights for the fabrication of fully dense structural ceramics with fine grains.
In this work, TaC ceramics with a high density (98.6 %) and fine grains (1.42 mu m) were fabricated by high pressure sintering. The as-sintered specimen possessed a high dislocation density of 1.9 x 1014 m- 2, which contributed to its high hardness of 16.26 GPa. In addition, the electrical conductivity was improved. The characterization results showed that high pressure greatly promoted densification and limited grain growth. The process provides valuable experiences and ideas for obtaining other fully dense structural ceramics with fine grains.

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