Ultrahigh-performance [001]-oriented porous PZT-5H single crystal grown by the solid state crystal growth method

Porous PZT-5H single crystals are grown by the solid state crystal growth (SSCG) method. The microstructure, phase structure and dielectric/piezoelectric properties are investigated for [001]-oriented porous PZT-5H single crystal. Evolution of phase structure with temperature is researched using in-situ temperature-dependent X-ray diffraction. The effect of pores on performance parameters is simulated using COMSOL Multiphysics & REG; software. Ultrahigh piezoelectric coefficient d33 of up to about 1700 pC/N and effective piezoelectric coefficient d33* of up to about 3700 pm/V at 5 kV/cm are obtained. Moreover, the effective piezoelectric coefficient d33* is stable around 1900 pm/V under 3 kV/cm and 5 kV/cm in the temperature range of 70-160 degrees C. Importantly, the sample possess an extremely large figure of merit g33*d33 (111 x 10-12 m2/N), which is related to the presence of pores in the single crystal. This work expands the scope of PZT based single crystal and highlights their significant application possibilities in piezoelectric energy harvester, and actuator at high temperature.

Automated summary

Porous PZT-5H single crystals were grown using the solid state crystal growth method. The microstructure, phase structure, and dielectric/piezoelectric properties of [001]-oriented porous PZT-5H single crystal were investigated. In-situ temperature-dependent X-ray diffraction was used to study the evolution of phase structure with temperature. The effect of pores on performance parameters was simulated using COMSOL Multiphysics software. High piezoelectric coefficients d33 and d33* were achieved, with stable behavior under different temperatures. The presence of pores in the single crystal contributed to an extremely large figure of merit g33*d33. This work expands the application possibilities of PZT based single crystals in piezoelectric energy harvesting and actuation at high temperatures.