4.8 Article

Tuning of Single Mixed (Helical) Dislocations in Core-Shell van der Waals Nanowires

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JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 145, 期 37, 页码 20503-20510

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AMER CHEMICAL SOC
DOI: 10.1021/jacs.3c06469

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This research presents a rational synthetic route for controlling the placement and tuning of single dislocations in van der Waals nanowires, allowing for the identification of their functional properties and potential technological applications.
Linear defects (dislocations) not only govern the mechanical properties of crystalline solids but they can also produce distinct electronic, thermal, and topological effects. Accessing this functionality requires control over the placement and geometry of single dislocations embedded in a small host volume to maximize emerging effects. Here we identify a synthetic route for rational dislocation placement and tuning in van der Waals nanowires, where the layered crystal limits the possible defect configurations and the nanowire architecture puts single dislocations in close proximity to the entire host volume. While homogeneous layered nanowires host single screw dislocations, the synthesis of radial nanowire heterostructures (here exemplified by GeS-Ge1-xSnxS monochalcogenide core-shell nanowires) transforms the defect into a mixed (helical) dislocation whose edge/screw ratio is tunable via the core-shell lattice mismatch. The ability to design nanomaterials with control over individual mixed dislocations paves the way for identifying the functional properties of dislocations and harnessing them in technology.

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