Multifunctional tantalum disilicide ceramics sintered at high temperature and high pressure

Silicide ceramics are attracted significant attention due to their exceptional physical properties. However, their inherent brittleness at room temperature limits their practical applications. Here, we aim to improve the mechanical properties of tantalum disilicide (TaSi2) ceramics by modifying the preparation methods and sintering conditions. We fabricate the dense TaSi2 ceramics using high-pressure and high-temperature (HPHT) sintering technology at 5.5 GPa and 800-1300 & DEG;C. We characterize the microstructures, mechanical, and electronic properties of bulk TaSi2 ceramics at HPHT conditions. Our results indicate an enhancement in the fracture toughness of 11.97 MPa m1/2 for TaSi2 ceramics. More importantly, the electrical conductivity (47.13 x 105 S/m) of TaSi2 ceramic is increased and verified by theoretical calculations. These findings provide crucial insights for future applications of TaSi2 and offer valuable avenues for the design and synthesis of advanced ceramic materials. Graphical Abstract: Multifunctional tantalum disilicide ceramics are sintered at 5.5 GPa and 1000 & DEG;C. image

Automated summary

Silicide ceramics, including tantalum disilicide (TaSi2), are known for their exceptional physical properties but are limited in practical applications due to their inherent brittleness at room temperature. In this study, we successfully improved the mechanical properties of TaSi2 ceramics and increased their electrical conductivity by modifying the preparation methods and sintering conditions. These findings provide valuable insights for future applications of TaSi2 and the design of advanced ceramic materials.