4.6 Article

Understanding Photophysical Properties of Molecules Relevant in Organic Semiconductor Laser Diodes from Electron Localization Function-Tuned and Solvent-Tuned Range-Separated Functionals

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JOURNAL OF PHYSICAL CHEMISTRY A
卷 127, 期 43, 页码 9069-9081

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AMER CHEMICAL SOC
DOI: 10.1021/acs.jpca.3c05486

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In this study, computationally inexpensive, nonempirically tuned functionals (ELF* and Sol*) were used to investigate the properties of five organic molecules used in OSLDs. The results showed that ELF* and Sol* functionals accurately reproduced the emission energies in toluene and CBP film environments, while the IP-tuned functional with excited-state geometry performed better in the gas phase. The study also compared different computational methods and reported oscillator strength values.
Organic semiconductor laser diodes (OSLDs) are prevalent in optoelectronics because of their sustainable energy applications. Organic molecules used in such diodes are usually large; hence, their studies are computationally challenging with high-end benchmark methods. Computational methods with reliable accuracy and efficiency are always indispensable. In the present work, we have applied our computationally inexpensive, nonempirically tuned [electron localization function (ELF*) and solvent (Sol*)] range-separated (RS) functionals to study five molecules used in OSLDs. The emission energies in three different environments [toluene, CBP (4,4 '-bis(n-carbazolyl)-1,1 '-biphenyl) film, and gas] have been computed with the tuned functionals and compared with the experimental emission energies. ELF* and Sol* functionals can accurately reproduce emission energies in toluene and CBP film environments. On the other hand, both ELF* and IP-tuned functionals with excited-state geometry (IP*) perform better in the gas phase. In addition, a comparative study is performed between time-dependent density functional theory and the Tamm-Dancoff approximation. Along with the emission energy, oscillator strength values have also been reported. Different IP-tuned RS parameters were obtained with the ground- and excited-state geometries. Interestingly, it has been observed that the optimally tuned RS parameter with excited-state geometry (IP*) performs better compared to that with ground-state geometries (IP). Fractional occupation calculations show that the tuned functionals exhibit less localization and delocalization error. The study envisages that ELF* and Sol* functionals can be used to design future candidates for OSLDs.

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