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Structure-property correlation of europium doped β-Ga2O3: an experimental and first-principle study

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The structure-properties correlation of Eu-doped beta-gallium oxides was studied using experimental and first-principle studies. The results showed that the thin films had nanocrystalline structures with small grain size and preferred orientation. The band gap energy of the material decreased on Eu doping, leading to improved visible light absorption. The first-principle study confirmed the experimental results.
In this work, the structure-properties correlation of Eu-doped beta-gallium oxides was studied by both experimental as well as first-principle studies. The thin films were grown by the PVD co-sputtering method on a quartz substrate and analyzed further. The results showed that thin film fabricated were nanocrystalline structures with an average grain size of similar to 0.029 +/- 0.005 mu m, and preferably oriented towards the (-201) plane. The band gap energy (Eg) of intrinsic beta-Ga2O3 measured from the Tauc plot shows a decreasing trend, as the band energy gap decreases from 3.98 to 3.88 eV on Eu doping, while the optical transmittance doesn't show any effect. Further, a first-principal study was conducted, and the simulated result of the band structure of beta-Ga2O3 on Eu doping also follows the same decreasing trend as the experimental results. The electronic band structure of intrinsic beta-Ga2O3 reduces to 3.41 eV from 4.9 eV on Eu doping. The total and partial density of states (DOS) results suggested that the reason behind the decreasing trend of the band structure of beta-Ga2O3 may be due to the dominance of the 4f states orbital in the lower conduction band on Eu doping in the tetrahedral site. The reflectance and energy loss function shows a reduction due to Eu doping, although the transmittance and absorption edge remains unaffected. There was a redshift in the absorption spectra observed of intrinsic beta-Ga2O3 on Eu doping, which improves the visible light absorption. It is suggested that co-doping with other rare earth metals may be able to tune the Eg and make it useful for monolithic and phosphor-free LEDs applications.

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