Wafer-scale heterogeneous integration of self-powered lead-free metal halide UV photodetectors with ultrahigh stability and homogeneity

Large-scale growth and heterogeneous integration with existing semiconductors are the main obstacles to the application of metal halide perovskites in optoelectronics. Herein, a universal vacuum evaporation strategy is presented to prepare copper halide films with wafer-scale spatial homogeneity. Benefiting from the electric field manipulation method, the built-in electric fields are optimized and further boost the self-powered UV photodetecting performances of common wide-bandgap semiconductors by more than three orders of magnitude. Furthermore, with effective modulation of the interfacial charge dynamics, the as-fabricated GaN-substrate heterojunction photodetector demonstrates an ultrahigh on/off ratio exceeding 10 7 , an impressive responsivity of up to 256 mA W -1 , and a remarkable detectivity of 2.16 x 10 13 Jones at 350 nm, 0 V bias. Additionally, the device exhibits an ultrafast response speed (tr/td = 716 ns/1.30 ms), an ultra-narrow photoresponse spectrum with an FWHM of 18 nm and outstanding continuous operational stability as well as long-term stability. Subsequently, a 372-pixel light-powered imaging sensor array with the coefficient of variation of photocurrents reducing to 5.20% is constructed, which demonstrates exceptional electrical homogeneity, operational reliability, and UV imaging capability. This strategy provides an efficient way for large-scale integration of metal halide perovskites with commercial semiconductors for miniature optoelectronic devices.& COPY; 2023 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.

Automated summary

A universal vacuum evaporation strategy is proposed to prepare copper halide films with wafer-scale spatial homogeneity. The self-powered UV photodetecting performances of common wide-bandgap semiconductors are significantly improved by optimizing the built-in electric fields using the electric field manipulation method. The fabricated GaN-substrate heterojunction photodetector exhibits impressive characteristics and outstanding stability.