期刊
JOURNAL OF LUMINESCENCE
卷 263, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.jlumin.2023.120009
关键词
SrGa 2 Si 2 O 8 phosphor; Cr 3+luminescence; Thermal quenching; Near-infrared LED
类别
There is significant interest in trivalent chromium ion-doped phosphors for near-infrared luminescence. In this study, trivalent chromium-doped SrGa2Si2O8 phosphors emitting near-infrared light were synthesized. The electronic structure was calculated and a transformation from [GaO4] tetrahedron to [CrO6] octahedron was observed due to the doping of Cr3+. The luminescent properties of SrGa2Si2O8:Cr3+ were systematically studied, and its high thermal stability and potential as a near-infrared LED light source were demonstrated.
There has been a lot of interest in trivalent chromium ion-doped phosphors for near-infrared (NIR) luminescence in recent years. Here, trivalent chromium-doped NIR emitting SrGa2Si2O8 phosphors were synthesized. The electronic structure was calculated via density functional theory. Although only [SrO7], [SiO4], and [GaO4] polyhedra were found in the host, we still observe broadband luminescence of Cr3+ in the region of 650-950 nm from octahedra site. Due to the doping of Cr3+, a transformation from [GaO4] tetrahedron rearrange into [CrO6] octahedron was produced. The experimental results of X-ray photoelectron spectroscopy and electron para-magnetic resonance spectroscopy demonstrated the presence of Cr3+. A systematic study of the photo-luminescence properties of SrGa2Si2O8:Cr3+ was conducted. The luminescent intensity of SrGa2Si2O8:0.005Cr3+ at 420 K can be retained at 83.42% compared to 300 K, indicating its high thermal stability. The electrolumi-nescence of the prepared light emitting diode (LED) based on SrGa2Si2O8:Cr3+ and blue LED chip was measured under various currents. The application as a NIR LED light source was demonstrated in human hands.
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