期刊
JOURNAL OF LUMINESCENCE
卷 260, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.jlumin.2023.119836
关键词
p-type; Sapphire; Co-sputtering; Photoluminescence; First-principles calculation
类别
This work discusses the growth, composition, and photoluminescence properties of Zn-doped Ga2O3 (ZnGaO) films. By doping Zn in ll-Ga2O3, the n-type conductivity of ll-Ga2O3 can be modulated to p-type. ZnGaO films with varying Zn contents were deposited on sapphire substrates, and X-ray analysis confirmed the stability of Zn dopant up to 8.62% in ZnGaO films. X-ray photoelectron spectroscopy revealed the increasing Zn content in ZnGaO films. The inclusion of Zn dopant in Ga2O3 films led to a shift in the peak emission wavelength of ll-Ga2O3 in the photoluminescence spectra, indicating the formation of more defect states and inducing green luminescence. The positive Hall coefficient of ZnGaO films verifies their p-type nature.
This work discusses the growth characteristics, composition, and photoluminescence properties of Zn-doped Ga2O3 (ZnGaO) films. The idea of doping of Zn divalent cation in ll-Ga2O3 is to modulate the n-type conductivity of ll-Ga2O3 to p-type. Therefore, a series of ZnGaO films with varying Zn contents have been deposited on sapphire substrates using co-sputtering of Ga2O3 and Zn targets at the substrate temperature of 400 degrees C. The X-ray diffraction analysis revealed that divalent Zn dopant is stable up to 8.62% in ZnGaO films. The X-ray photoelectron spectroscopy defined the increasing amount of Zn content in ZnGaO films. The lowest defect formation energy per atom by first-principles calculations indicates that the favourable site of Zn atoms is substitutional Ga tetrahedral site (T-site) in ZnGaO. The photoluminescence (PL) spectra exhibited that the peak emission wavelength of ll-Ga2O3 can be shifted with the inclusion of divalent Zn dopant in Ga2O3 films, which is in accordance with the energy diagram and charge density distribution, indicating the Zn substituted T-site Ga are leading to more defect states, and inducing green luminescence in PL spectra. The ZnGaO films exhibited positive Hall coefficient, which verifies the p-type nature of films. ZnGaO films demonstrate a unique ability to realize ptype characteristics among emerging wide bandgap semiconductors, extending its applications at the forefront of contemporary optoelectronics technologies.
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