Analysis of reported substrate-misorientation and growth-temperature dependences of alloy composition in metalorganic vapor-phase epitaxially grown c-plane InGaN

Summary: We used kinetic Monte Carlo simulations to model the growth of InGaN alloys on perfectly oriented and misoriented GaN surfaces. As the temperature increases, we observed two phenomena: composition pulling along the growth direction and lateral indium rich cluster formation. Both phenomena are caused by strain, and temperature enables their manifestation. The transition from statistical alloys to heterogeneous layers with indium rich clusters occurs as the growth temperature increases, and this transition can be quantified using a cluster index based on the spatial distribution of In and Ga atoms.

Summary: Based on the Burton-Cabrera-Frank theory and step-edge segregation model, the study analyzed the difference in doped magnesium concentration under naturally formed surface stripes. It considered the growth steps on different sloped surfaces and confirmed the relationship between magnesium concentration and step velocity.