期刊
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
卷 58, 期 5, 页码 1113-1116出版社
WILEY-BLACKWELL
DOI: 10.1002/mop.29737
关键词
TiO2; film; annealing; photocurrent; charge carrier generation
资金
- Ministry of Education and Science of the Russian Federation [3.1206.2014]
The TiO2 thin films have been deposited onto Si epilayer-covered Si substrates by magnetron sputtering of a TiO2 target. The influence of thermal annealing conditions on the photoelectrical characteristics of TiO2-n-Si structures has been studied. The photoresistive effect is observed for the films annealed in Ar at T= 500 degrees C and 750 degrees C. (C) 2016 Wiley Periodicals, Inc.
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