Spin polarization gate device based on the chirality-induced spin selectivity and robust nonlocal spin polarization

Nonlocal spin polarization phenomena are thoroughly investigated in the devices made of chiral metallic single crystals of CrNb3S6 and NbSi2 as well as of polycrystalline NbSi2. We demonstrate that simultaneous injection of charge currents in the opposite ends of the device with the nonlocal setup induces the switching behavior of spin polarization in a controllable manner. Such a nonlocal spin polarization appears regardless of the difference in the materials and device dimensions, implying that the current injection in the nonlocal configuration splits spin-dependent chemical potentials throughout the chiral crystal even though the current is injected into only a part of the crystal. We show that the proposed model of the spin dependent chemical potentials explains the experimental data successfully. The nonlocal double-injection device may offer significant potential to control the spin polarization to large areas because of the nature of long-range nonlocal spin polarization in chiral materials.

Automated summary

Nonlocal spin polarization phenomena were investigated in devices made of chiral metallic single crystals of CrNb3S6 and NbSi2, as well as polycrystalline NbSi2. It was demonstrated that simultaneous injection of charge currents in opposite ends of the device induced controllable switching behavior of spin polarization in a nonlocal setup. This nonlocal spin polarization occurred regardless of material and device dimensions, indicating that current injection in the nonlocal configuration split spin-dependent chemical potentials throughout the chiral crystal. The proposed model of spin-dependent chemical potentials successfully explained the experimental data. The nonlocal double-injection device shows significant potential for controlling spin polarization in large areas due to the long-range nonlocal spin polarization in chiral materials.