期刊
MICROSCOPY AND MICROANALYSIS
卷 22, 期 3, 页码 576-582出版社
CAMBRIDGE UNIV PRESS
DOI: 10.1017/S1431927616000581
关键词
atom probe; focused ion beam; sample preparation; xenon; annular milling
资金
- Recherche Technologique de Base program
- APTITUDE ANR project of the French National Research Agency [ANR-12-NANO-0001]
- CIFRE (ANRT) scholarship
- Agence Nationale de la Recherche (ANR) [ANR-12-NANO-0001] Funding Source: Agence Nationale de la Recherche (ANR)
The damage and ion distribution induced in Si by an inductively coupled plasma Xe focused ion beam was investigated by atom probe tomography. By using predefined patterns it was possible to prepare the atom probe tips with a sub 50nm end radius in the ion beam microscope. The atom probe reconstruction shows good agreement with simulated implantation profiles and interplanar distances extracted from spatial distribution maps. The elemental profiles of O and C indicate co-implantation during the milling process. The presence of small disc-shaped Xe clusters are also found in the three-dimensional reconstruction. These are attributed to the presence of Xe nanocrystals or bubbles that open during the evaporation process. The expected accumulated dose points to a loss of >95% of the Xe during analysis, which escapes undetected.
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