4.6 Article

Depth-resolved measurement of the Meissner screening profile in a niobium thin film from spin-lattice relaxation of the implanted β-emitter 8Li

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JOURNAL OF APPLIED PHYSICS
卷 134, 期 16, 页码 -

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AIP Publishing
DOI: 10.1063/5.0175532

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In this study, we used Li-8 beta-detected nuclear magnetic resonance (beta-NMR) to measure the Meissner screening profile in a Nb/Al2O3 thin film. By fitting the data to a model considering temperature, magnetic field, and ion implantation energy, we obtained the magnetic penetration depth and the mean free path of the carrier for the Nb film.
We report measurements of the Meissner screening profile in a Nb(300 nm)/Al2O3 thin film using Li-8 beta-detected nuclear magnetic resonance (beta-NMR). The NMR probe Li-8 was ion-implanted into the Nb film at energies <= 20 keV, corresponding to mean stopping depths comparable to Nb's magnetic penetration depth lambda. Li-8's strong dipole-dipole coupling with the host Nb-93 nuclei provided a cross-relaxation channel that dominated in low magnetic fields, which conferred indirect sensitivity to the local magnetic field via the spin-lattice relaxation (SLR) rate 1/T-1. From a fit of the 1/T-1 data to a model accounting for its dependence on temperature, magnetic field, and Li-8(+) implantation energy, we obtained a magnetic penetration depth lambda(0) = 51.5(22) nm, consistent with a relatively short carrier mean-free-path & ell; = 18.7(29) nm typical of similarly prepared Nb films. The results presented here constitute an important step towards using Li-8 beta-NMR to characterize bulk Nb samples with engineered surfaces, which are often used in the fabrication of particle accelerators.

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