Epitaxial conducting ABO3 perovskite oxide thin films

Over the last few decades, research thrust in the growth and engineering of high quality atomically smooth epitaxial thin films have increased tremendously, displaying unprecedented quantum correlated phenomena and ample potential for oxitronics. Regardless of the significant progress made thus far, the growth of high quality defect-free atomically smooth epitaxial conducting perovskite oxide thin films continues to be a very active area of research, as several intrinsic and/or extrinsic factors affect the film quality and consequent electronic properties. Here, we made efforts to summarize the progress made with focus on the growth of atomically smooth electronic quality epitaxial thin films of several highly conducting ABO(3) perovskites with low resistivity (high conductivity). Concomitantly, optimization of growth parameters (kinetics and thermodynamics of the material) and the film-substrate interaction seems to play a crucial role in epitaxy quality. Highly conducting epitaxial oxide thin films are pivotal in bridging the gap between oxides and the practicalities in integrating them for electronics.

Automated summary

In recent decades, there has been a significant increase in research focused on growing high quality atomically smooth epitaxial thin films, demonstrating unprecedented quantum correlated phenomena and a great potential for oxitronics. However, the growth of defect-free and highly conducting perovskite oxide thin films still remains an active area of research due to various factors influencing film quality and electronic properties. This review summarizes the progress in growing atomically smooth epitaxial thin films of highly conducting ABO(3) perovskites with low resistivity and highlights the importance of optimizing growth parameters and film-substrate interaction for achieving high-quality epitaxy. Highly conducting epitaxial oxide thin films are essential for bridging the gap between oxides and their practical integration in electronics.