Charge transport, photoresponse and impedance spectroscopy for Au/ NiTPP/n-Si/Al diode

The current work was illustrated the impact of a thin film from Ni (II) Tetraphenylporphyrin (NiTPP) on the performance of the Au/n-Si Schottky. Structural and topographical properties of a NiTPP/n-Si thin film were examined using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. The NiTPP/n-Si film was nanocrystalline, with an average crystallite size of approximately 33.87 nm and an average roughness of around 4.30 nm. The molecular structure and purity of NiTPP/n-Si were also confirmed using Raman spectra. Dark current-voltage (I-V) characteristics were used to determine and describe the diode parameters and conduction processes at forward bias as a function of temperature (300-390 K) for an Au/NiTPP/n-Si/Al diode. Photoresponse qualities of the diode were investigated under different illumination conditions. The reverse current of the diode grows as the light intensity increases. Impedance spectroscopy (IS) was performed at 0.025-1000 kHz. To assess the interface and recombination processes, the equivalent circuit model was thoroughly investigated. The findings demonstrate that the Au/NiTPP/n-Si/Al diode as a photodetector had significant potential for using in next-generation electrical devices.

Automated summary

The impact of a NiTPP thin film on the performance of an Au/n-Si Schottky device was investigated. The structural and topographical properties of the NiTPP/n-Si film were analyzed using XRD and AFM. The film was found to be nanocrystalline, with a average crystallite size of 33.87 nm and roughness of 4.30 nm. The molecular structure and purity were confirmed using Raman spectra. The diode parameters and conduction processes were determined and the photoresponse qualities were examined. Impedance spectroscopy was performed, and the equivalent circuit model was investigated to assess interface and recombination processes. The study highlights the potential of the Au/NiTPP/n-Si/Al diode as a photodetector in next-generation electronic devices.