4.7 Article

Observation of High Magnetic Bistability in Lanthanide (Ln = Gd, Tb and Dy)-Grafted Carbon Nanotube Hybrid Molecular System

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MDPI
DOI: 10.3390/ijms241512303

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carbon nanotubes; lanthanide composite; magnetization; molecular magnetism; magnetic bistability; superparamagnetic behavior

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A one-step chemical approach was used to synthesize lanthanide-EDTA chelates and graft them onto MWCNT surfaces, resulting in high magnetic bistability retention. The study showed that different Ln-CNT hybrid molecular systems displayed distinct magnetic behaviors, indicating the importance of selecting lanthanide ions for designing multi-functional SMM-CNT hybrids.
There is an immense research interest in molecular hybrid materials posing novel magnetic properties for usage in spintronic devices and quantum technological applications. Although grafting magnetic molecules onto carbon nanotubes (CNTs) is nontrivial, there is a need to explore their single molecule magnetic (SMM) properties post-grafting to a greater degree. Here, we report a one-step chemical approach for lanthanide-EDTA (Ln = Gd-III, 1; Tb-III, 2 and Dy-III, 3) chelate synthesis and their effective grafting onto MWCNT surfaces with high magnetic bistability retention. The magnetic anisotropy of an Ln-CNT hybrid molecular system by replacing the central ions in the hybrid complex was studied and it was found that system 1 exhibited a magnetization reversal from positive to negative values at 70 K with quasi-anti-ferromagnetic ordering, 2 showed diamagnetism to quasi-ferromagnetism and 3 displayed anti-ferromagnetic ordering as the temperature was lowered at an applied field of 200 Oe. A further analysis of magnetization (M) vs. field (H) revealed 1 displaying superparamagnetic behavior, and 2 and 3 displaying smooth hysteresis loops with zero-field slow magnetic relaxation. The present work highlights the importance of the selection of lanthanide ions in designing SMM-CNT hybrid molecular systems with multi-functionalities for building spin valves, molecular transistors, switches, etc.

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