期刊
MICROELECTRONIC ENGINEERING
卷 160, 期 -, 页码 49-53出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2016.02.050
关键词
Resistive switching; Manganese oxide; Tantalum oxide; Self-compliance
资金
- Nano Material Technology Development Program of the National Research Foundation of Korea (NRF)
- Ministry of Science, ICT & Future Planning [NRF-2011-0030228]
- Myongji University's Research Fund
The monodisperse manganese oxide nanoparticles with an average diameter of 30 nm were chemically synthesized. The nanoparticles assembled as a close-packed monolayer on Pt bottom electrode by dip-coating and annealing process. The Ta/Ta2O5/MnO/Pt device was fabricated. The bipolar resistive switching behaviors could be caused by the formation and rupture of conductive filaments in the switching layers. The stable self compliance property was demonstrated which can be attributed to the high resistance Ta/Ta2O5 interface, the Schottky barrier of Ta/Ta2O5, and the discontinuity of conduction band at Ta2O5 and MnO interface. The retention characteristics of Ta/Ta2O5/MnO/Pt device were investigated. The conduction mechanisms of Ohmic conduction, space charge limited conduction, Schottky conduction and Poole-Frenkel emission had been investigated for resistance switching mechanism. (C) 2016 Elsevier B.V. All rights reserved.
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