4.5 Article

A Low Phase-Lag Self-Powered SECE Interface Circuit for Pressure-Type Piezoelectric Energy-Harvesting Compatible With COTS Pressure Sensors

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TVLSI.2023.3280923

关键词

CMOS; energy extraction; energy harvesting; piezoelectric (PE); self-powered; synchronous electric charge extraction (SECE)

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A new self-powered CMOS synchronous electric charge extraction circuit is proposed for pressure-type piezo-electric energy-harvesters. The circuit utilizes peak detectors with precharging and body-drive enhanced PMOS switches to reduce switching phase-lag and improve efficiency. The overall harvesting efficiency is 78.04% at a peak voltage of 3.5V, significantly higher than other self-powered CMOS energy extraction circuits. The circuit can extract charge from commercial-off-the-shelf pressure sensors, providing an additional feature for piezoelectric pressure sensors.
The charge-extraction circuits for cantilever-type piezo-electric (PE) vibrational energy-harvesters (EHs) are well established. However, energy-extraction circuits for a transverse-moving diaphragm-type (pressure-type) PE-EH have not yet been thoroughly investigated. Compared to cantilever-type-EH that operates at the resonance frequency of 50-200 Hz, the pressure-type-EH operates at under 2 Hz. This work proposes a new self-powered CMOS synchronous electric charge extraction (CMOS SECE) circuit for pressure-type PE-EH. The proposed circuit uses peak detectors (PDs), which employ precharging and body (back-gate)-drive enhanced PMOS switches. This novel design enables lower switching phase-lag and higher efficiency wasting significantly less power compared to previously reported low phase-lag PDs. The phase lag is reduced by around 50% for a peak voltage close to the startup voltage. The overall harvesting efficiency is 78.04% at the peak voltage (V-PM) of 3.5 V, which is much higher than other recently reported self-powered CMOS energy extraction circuits. The circuit is fabricated using the 180-nm TSMC CMOS technology and consumes 0.4-mm two active area. The proposed circuit can extract charge from any commercial-off-the-shelf (COTS) PE pressure-sensor when the sensor is in the idle mode, enabling an extra add-on feature for the piezoelectric pressure sensors.

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