4.6 Article

Study and Optimization of Two-State Transient Currents at Millisecond Time Scales in MIS Tunnel Diodes

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Engineering, Electrical & Electronic

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

Shan Jiang et al.

Summary: In this article, a Bayesian deconvolution algorithm is used to optimize trap feature extraction of the SiC/SiO2 interface state in SiC MOSFETs. The trap position, energy level, and capture time constant are characterized. Three types of traps and defects are identified, including SiC interface traps at the gate-source and gate-drain interfaces with activation energies of 0.089 and 0.035 eV, respectively, and an oxide trap with temperature-independent time constant. The results are validated through deep-level transient spectroscopy and show reasonable agreement. This method can be used in nondestructive characterization of SiC MOSFET defects in long-term reliability research.

IEEE TRANSACTIONS ON POWER ELECTRONICS (2023)

Article Engineering, Electrical & Electronic

Improved Two States Characteristics in MIS Tunnel Diodes by Oxide Local Thinning Enhanced Transient Current Behavior

Sung-Wei Huang et al.

Summary: This study demonstrates the effect of oxide local thinning (OLT) on the increase in current two states in metal-insulator-semiconductor (MIS) tunnel diodes for dynamic memory usage. The improvement in the read current window is significant. Soft breakdown (SBD) is observed in the MIS sample after performing the deep depletion stress (DDS), indicating local thinning of the oxide. Pulsed voltage programming results in a larger magnitude of transient read current for OLT MIS, leading to improved current two states characteristics.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

Article Engineering, Electrical & Electronic

Detailed Study on the Role of Nature and Distribution of Pinholes and Oxide Layer on the Performance of Tunnel Oxide Passivated Contact (TOPCon) Solar Cell

Sourav Sadhukhan et al.

Summary: TOPCon solar cells have shown higher efficiency than traditional Al-BSF or PERC solar cells, and their performance can be further improved by optimizing the size and number density of pinholes and the thickness of the oxide layer.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

Article Engineering, Electrical & Electronic

Transient Current Enhancement in MIS Tunnel Diodes With Lateral Electric Field Induced by Designed High-Low Oxide Layers

Sung-Wei Huang et al.

Summary: In this study, the steady-state and transient behavior of metal-insulator-semiconductor tunnel diodes with high-low (H/L) oxide layers were investigated through experiments and simulations. The use of H/L oxide layers was found to reduce leakage or tunneling current at reverse bias by reducing minority carrier density near the gate edge. Characteristics of devices with various parameters were studied to identify conditions for tunneling current reduction, leading to enhanced transient current and capacitance change. The simulation confirmed the observed phenomena, including the existence of lateral electron current flow reducing minority carrier density near the gate edge. A memory operation using the H/L device showed improved read current and stable performance, making it a potential future volatile memory application.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

Article Materials Science, Multidisciplinary

Evaluation of Minority Carrier Generation Lifetime for Oxide Semiconductors

Pyungho Choi et al.

THIN SOLID FILMS (2020)

Article Engineering, Electrical & Electronic

Enhancement of Transient Two-States Characteristics in Metal-Insulator-Semiconductor Structure by Thinning Metal Thickness

Kuan-Hao Tseng et al.

IEEE TRANSACTIONS ON NANOTECHNOLOGY (2017)

Proceedings Paper Engineering, Electrical & Electronic

Double Negative Differential Resistance Properties in MISIM Structure with Substrate Grounded and Two Electrode Terminals Biased with Constant Offset Voltage

Chang-Feng Yang et al.

SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR (2017)

Proceedings Paper Electrochemistry

Current Coupling Effect in MIS Tunnel Diode with Coupled Open-Gated MIS Structure

Chien-Shun Liao et al.

SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 14 (2016)

Article Engineering, Electrical & Electronic

Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs

Hamid Amini Moghadam et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)

Article Physics, Multidisciplinary

Bohm's quantum potential as an internal energy

Glen Dennis et al.

PHYSICS LETTERS A (2015)

Article Energy & Fuels

40 Years of Inversion Layer Solar Cells: From MOS to Conducting Polymer/Inorganic Hybrids

Rotem Har-Lavan et al.

IEEE JOURNAL OF PHOTOVOLTAICS (2013)

Article Engineering, Electrical & Electronic

Evaluation of Cu Contamination at Backside Surface of Thinned Wafer in 3-D Integration by Transient-Capacitance Measurement

Jichel Bea et al.

IEEE ELECTRON DEVICE LETTERS (2011)

Review Chemistry, Analytical

Metal-Insulator-Semiconductor Photodetectors

Chu-Hsuan Lin et al.

SENSORS (2010)

Article Electrochemistry

Oxide-thickness-dependent suboxide width and its effect on inversion tunneling current

YP Lin et al.

JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2004)

Article Materials Science, Coatings & Films

Suboxide characteristics in ultrathin oxides grown under novel oxidation processes

YP Lin et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2004)