Hybrid CMOS and Pseudo-CMOS Organic Memory for Flexible Sensors

In this paper, we propose and elucidate a novel static random access memory (SRAM) for flexible electronic systems using low-voltage organic thin-film transistors. The SRAM can be used for local data storage and post-processing of the signals generated by sensors. This is essential for truly flexible systems. The proposed SRAM utilizes hybrid CMOS and pseudo-CMOS design to enhance stability. The memory cells based on CMOS design style utilize p-type access transistors to improve area efficiency and stability. A degradation-mitigation circuit, based on pseudo-CMOS design style, extends retention time. The proposed circuit, which is comprised of few basic logic gates, is easy to implement and occupies minimum layout area. The SRAM circuit can self-detect degradation and automatically perform a process to mitigate device degradation at the necessary time periods. We confirm the operation of key components in the proposed memory via test chip measurements. Additionally, the effectiveness of the degradation-mitigation circuit has been verified.

Automated summary

This paper presents a novel SRAM based on low-voltage organic thin-film transistors for local data storage and signal post-processing in flexible electronic systems. The proposed circuit combines CMOS and pseudo-CMOS designs for improved stability and area efficiency. The degradation-mitigation circuit extends retention time and can automatically detect and mitigate device degradation.