☆ 4.6 Article

Low-Thermal-Budget Fabrication of Transparent Ferroelectric Thin-Film Transistors on Glass Substrates

IEEE ELECTRON DEVICE LETTERS (2023)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Article Multidisciplinary Sciences

Highly-scaled and fully-integrated 3-dimensional ferroelectric transistor array for hardware implementation of neural networks

Ik-Jyae Kim et al.

Summary: Hardware-based neural networks (NNs) have the potential to revolutionize AI applications by extracting features from unstructured data and learning from them. However, implementing complex NN models is challenging because different tasks require different memory elements and arrays, resulting in increased chip size.

NATURE COMMUNICATIONS (2023)

添加到收藏夹

Article Chemistry, Physical

All-inorganic transparent Hf0.85Ce0.15O2 ferroelectric thin films with high flexibility and stability

Sheng-Tao Mo et al.

Summary: This study successfully fabricated a transparent flexible Ce-doped hafnium oxide ferroelectric thin film and demonstrated its high transmittance and good performance. The research provides an important experimental basis for the development of transparent flexible ferroelectric memories.

NANO RESEARCH (2023)

添加到收藏夹

Review Chemistry, Multidisciplinary

Ferroelectric Transistors for Memory and Neuromorphic Device Applications

Ik-Jyae Kim et al.

Summary: This review summarizes the recent developments in ferroelectric devices, particularly ferroelectric transistors, for next-generation memory and neuromorphic applications. It first reviews the types and operation mechanisms of ferroelectric memories, then discusses the issues limiting the realization of high-performance ferroelectric transistors and possible solutions. It also reviews the experimental demonstration of ferroelectric transistor arrays, including 3D ferroelectric NAND and its operation characteristics, and outlines the challenges and strategies towards the development of next-generation memory and neuromorphic applications based on ferroelectric transistors.

ADVANCED MATERIALS (2023)

添加到收藏夹

Article Nanoscience & Nanotechnology

One Nanometer HfO2-Based Ferroelectric Tunnel Junctions on Silicon

Suraj S. Cheema et al.

Summary: The study integrated FTJs with Zr-doped HfO2 ferroelectric barriers, grown by atomic layer deposition on silicon, to demonstrate the potential for large polarization-driven electroresistance and tunneling current. This combination overcomes the major drawbacks of prototypical FTJs, providing a Si-compatible ultrathin ferroelectric barrier with large electroresistance and read current for high-speed operation.

ADVANCED ELECTRONIC MATERIALS (2022)

添加到收藏夹

Article Multidisciplinary Sciences

CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory

Min-Kyu Kim et al.

Summary: Ferroelectric memory has been extensively researched for its potential of higher speed, lower power consumption, and longer endurance compared to conventional flash memory. By utilizing hafnia-based ferroelectrics and oxide semiconductors, it is possible to avoid unwanted interfacial layers and achieve unprecedented Si-free 3D integration of ferroelectric memory, with memory performance surpassing conventional flash memory and previous perovskite ferroelectric memories.

SCIENCE ADVANCES (2021)

添加到收藏夹

Article Chemistry, Physical

Nanowatt use 8 V switching nonvolatile memory transistors with 2D MoTe2 channel and ferroelectric P(VDF-TrFE)

Yongjae Cho et al.

Summary: This study investigates two dimensional p-MoTe2 channel-based nonvolatile memory transistors with ferroelectric P(VDF-TrFE) polymer using a bottom-gate device architecture, which significantly reduces switching and drain voltages to minimize power consumption. By employing special processing methods and a bottom-gate structure, low-power memory transistors were successfully fabricated.

NANO ENERGY (2021)

添加到收藏夹

Proceedings Paper Engineering, Electrical & Electronic

Device Engineering Strategy of Zr-Doped HfOx Ferroelectric Memory for Unconventional Computing Applications

Jiyong Woo

Summary: This study discusses the device design strategy of ferroelectric memory based on Zr doped HfOx, showing that high pressure annealing can lower the temperature required for phase transition in the HfOx layer to 550 degrees C and improve crystallinity. In situations where thermally stabilized ferroelectricity at high temperatures is preferred, a trilayer structure with a thin Al2O3 layer is introduced to enhance stability.

2021 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Influence of Annealing Temperature on the Structural and Electrical Properties of Si-Doped Ferroelectric Hafnium Oxide

Maximilian Lederer et al.

Summary: The study shows that the properties of hafnium oxide films are greatly affected by the crystallization process, with annealing temperature playing a significant role in influencing the crystallographic properties and microstructure, thereby impacting the ferroelectric properties.

ACS APPLIED ELECTRONIC MATERIALS (2021)

添加到收藏夹

Article Chemistry, Analytical

Indium Tin Oxide Thin-Film Thermocouple Probe Based on Sapphire Microrod

Jinjun Deng et al.

SENSORS (2020)

添加到收藏夹

Article Engineering, Electrical & Electronic

The Past, the Present, and the Future of Ferroelectric Memories

T. Mikolajick et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)

添加到收藏夹

Article Engineering, Electrical & Electronic

The future of ferroelectric field-effect transistor technology

Asif Islam Khan et al.

NATURE ELECTRONICS (2020)

添加到收藏夹

Article Computer Science, Information Systems

A Low-Power Memory-in-Pixel Circuit for Liquid Crystal Displays Comprising Low-Temperature Poly-Silicon and Oxide Thin-Film Transistors

Jongbin Kim et al.

ELECTRONICS (2020)

添加到收藏夹

Article Physics, Applied

TiNx/Hf0.5Zr0.5O2/TiNx ferroelectric memory with tunable transparency and suppressed wake-up effect

Yuxing Li et al.

APPLIED PHYSICS LETTERS (2019)

添加到收藏夹

Article Engineering, Electrical & Electronic

Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films

Rongrong Cao et al.

IEEE ELECTRON DEVICE LETTERS (2018)

添加到收藏夹

Article Engineering, Electrical & Electronic

Pixel Architecture for Low-Power Liquid Crystal Display Comprising Oxide and Ferroelectric Memory Thin Film Transistors

Seung-Hyuck Lee et al.

IEEE ELECTRON DEVICE LETTERS (2015)

添加到收藏夹

Review Chemistry, Multidisciplinary

Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

E. Fortunato et al.

ADVANCED MATERIALS (2012)

添加到收藏夹

Article Physics, Applied

Ferroelectricity in hafnium oxide thin films

T. S. Boescke et al.

APPLIED PHYSICS LETTERS (2011)

添加到收藏夹

Article Chemistry, Multidisciplinary

Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C

Sung-Min Yoon et al.

ADVANCED FUNCTIONAL MATERIALS (2010)

添加到收藏夹

Article Engineering, Electrical & Electronic

Ultra-low-power LTPS TFT-LCD technology using a multi-bit pixel memory circuit

Yoshiharu Nakajima et al.

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY (2006)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.