Low-Thermal-Budget Fabrication of Transparent Ferroelectric Thin-Film Transistors on Glass Substrates

Ferroelectric transistors are promising for next-generation display applications due to their nonvolatile memory functionalities, low power consumption, and high-speed operation. However, conventional ferroelectric transistors are fabricated using nontransparent materials with high-temperature processes, making them unsuitable for display applications. In this study, we fabricated a low-thermal-budget transparent ferroelectric transistor at a temperature below 400 degrees C. This device exhibits a transmittance of 82% under visible light as well as a high switching speed and endurance. The high transmittance and low-temperature fabrication process make it an ideal candidate for use in next-generation transparent display technologies. This study demonstrates a significant advancement in the field of ferroelectric transistors and transparent electronics; the suggested device has the potential to be used in electronic devices for transparent display applications.

Automated summary

This study presents a low-thermal-budget transparent ferroelectric transistor with high transmittance and good switching performance, which is suitable for next-generation transparent display technologies.