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Article
Engineering, Electrical & Electronic
Niloy Chandra Saha et al.
Summary: In this study, a NO2 p-type doped and Al2O3 bilayer passivated diamond metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated on a misoriented heteroepitaxial diamond substrate. The MOSFET exhibited a high breakdown voltage of 3659 V, the highest reported among diamond MOSFETs. MOSFETs with a gate length of 2.5 μm showed a maximum drain current density of 372 mA/mm and a maximum available power density (Baliga's figure-of-merit) of 173 MW/cm(2). Moreover, the maximum mobility was estimated to be 187 cm(2)/V center dot s, and the subthreshold swing was 189 mV/dec. This study explores the prospects of misoriented heteroepitaxial diamonds in power electronic device applications.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Niloy Chandra Saha et al.
Summary: In this study, the constant gate bias stress characteristics of a passivated, NO2 p-type doped diamond MOSFET were reported over a long period of 190 hours. The MOSFET showed stable operation without degradation in drain current, and slight increase in drain current. Prolonged stress led to an increase in gate leakage current, which was attributed to charge injection into the Al2O3 layer. After stress withdrawal, the gate leakage current disappeared and the MOSFET characteristics recovered. This study demonstrated the potential of diamond MOSFETs for long-term stability and durability in power circuit applications.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Niloy Chandra Saha et al.
Summary: This letter presents the fast-switching characteristics of a normally-on NO2 p-type doped diamond metal-oxide-semiconductor field-effect transistor (MOS-FET). The diamond MOSFET achieved a very fast-switching operation with a turn-on (t(on)) and turn-off (t(off)) time as low as 9.97 and 9.63 ns, respectively. The parasitic parameters including input capacitance (Ciss) of 245 nF/mm, output capacitance (Coss) of 732 pF/mm, and reverse capacitance (C-rss) of 17 pF/mm were measured to influence the switching time and switching loss. The total switching energy loss was determined to be only 208 pJ. This report suggests the potential of NO2-doped diamond MOSFETs for high-speed switching applications.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Niloy Chandra Saha et al.
Summary: In this study, a passivated, NO2 p-type doped diamond metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated on a chemical mechanical planarized high-quality heteroepitaxial diamond substrate. The MOSFET had a low specific ON-resistance and a high OFF-state breakdown voltage. Chemical mechanical planarization effectively removed subsurface damages on the diamond surface, resulting in a low resistive diamond surface. Therefore, the MOSFET exhibited a high drain current density and the highest reported maximum available power density for diamond devices.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Niloy Chandra Saha et al.
Summary: This letter reports the fabrication and characterization of 3.3-kV modulation-doped diamond metal-oxide-semiconductor field-effect transistors (MOSFETs). The modulation doping was performed via NO2 delta doping in the Al2O3 gate layer. The study shows that the modulation-doped diamond MOSFET has high drain current density, specific ON-resistance, and figure-of-merit.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Niloy Chandra Saha et al.
Summary: The study developed diamond MOSFET transistors with high off-state breakdown voltage on high-quality heteroepitaxial diamond, and the Al2O3 passivation overlayer increased their high-voltage-handling capability. Results showed specific on-resistance and maximum drain current density for the MOSFET, with extremely low gate leakage current.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Materials Science, Multidisciplinary
Niloy Chandra Saha et al.
DIAMOND AND RELATED MATERIALS
(2019)
Article
Engineering, Electrical & Electronic
Shoichiro Imanishi et al.
IEEE ELECTRON DEVICE LETTERS
(2019)
Article
Engineering, Electrical & Electronic
Xinxin Yu et al.
IEEE ELECTRON DEVICE LETTERS
(2018)
Article
Materials Science, Multidisciplinary
T. Wade et al.
DIAMOND AND RELATED MATERIALS
(2017)
Article
Physics, Applied
Makoto Kasu et al.
APPLIED PHYSICS EXPRESS
(2012)
Article
Materials Science, Multidisciplinary
M. Kubovic et al.
DIAMOND AND RELATED MATERIALS
(2010)
Review
Materials Science, Multidisciplinary
Chris J. H. Wort et al.
Article
Engineering, Electrical & Electronic
K. Ueda et al.
IEEE ELECTRON DEVICE LETTERS
(2006)
Article
Engineering, Electrical & Electronic
M Kasu et al.
ELECTRONICS LETTERS
(2005)
Article
Multidisciplinary Sciences
J Isberg et al.
