Stable AC Stress Operation (100 h) of NO2 p-Type Doped Diamond MOSFETs

This letter reports the forward bias AC stress-induced effects of NO2 p-type doped and Al2O3 layer passivated diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) demonstrating 100 h of stable AC operation without any degradation in the output drain current. An increase in the drain current was observed owing to the long stress time. Long-term stress caused negative charges to enter into the Al2O3 layer, resulting in an increase in the gate leakage current temporarily that disappeared gradually after the withdrawal of the stress. The recovery of the output characteristics depends on the release time of the trap charges. This study indicates the feasibility of diamond MOSFET for a long-period stable operation in power circuit applications.

Automated summary

This study reports the effects of forward bias AC stress on NO2 p-type doped and Al2O3 layer passivated diamond MOSFETs. The results show stable AC operation for 100 hours without degradation in the output drain current. Long-term stress leads to the entry of negative charges into the Al2O3 layer, causing a temporary increase in the gate leakage current that gradually disappears after the withdrawal of stress. This study demonstrates the feasibility of long-term stable operation of diamond MOSFETs in power circuit applications.