期刊
IEEE ELECTRON DEVICE LETTERS
卷 44, 期 10, 页码 1764-1767出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2023.3305577
关键词
Steep slope; cold metals; first principles; quantum transport
In this study, we explored 3D cold metals as cold source contacts in MoS2 FETs and achieved sub-60 mV/dec switching. We found that cold metals possess an intrinsic energy gap above the Fermi level and can filter high-energy electrons. By appropriate doping, the contact resistances can be reduced, and the device performance of MoS2 FETs can meet the requirements of IRDS with significantly reduced power dissipation.
Three-dimensional cold metals are explored and applied as a cold source (CS) contact in monolayer (ML) MoS2 FETs to realize sub-60 mV/dec switching. We comprehensively studied the electronic properties of six kinds of cold-metals, cold-metal semiconductor contacts, and the device performance of MoS2 CSFETs by first-principles quantum transport simulations. These cold-metals possess an intrinsic energy gap above the Fermi level and can filter high-energy electrons as a cold electron source. The contact resistances between cold metals and ML-MoS2 are calculated and can be reduced by appropriate doping for high injection currents. Device simulations show that an average subthreshold swing of 20 mV/dec in over five-decades of current and an on-state current over 5.7x10(2)mu A/mu m can be achieved in MoS2 CSFETs with cold-metal contacts at V-D = 0.5 V and I-off = 10(-4) mu A/mu m . The simulated device performance of MoS2 CSFETs can meet the requirements of IRDS with significantly reduced power dissipation.
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