Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs

This letter proposes and demonstrates single-crystal Germanium (Ge) growth by elevated-laser-liquid-phase-epitaxy (ELLPE) and the fabrication of Ge Fin field-effect transistors (FinFETs) for the monolithic three-dimensional integrated circuits (monolithic 3D ICs). This technique permitted the fabrication of single-crystalline (100) Ge film and FinFETs without random grain boundaries. In comparison with the poly-Ge FinFETs, the ELLPE Ge FinFETs exhibit superior performance and uniformity. Moreover, the ANSYS simulated maximum temperature of bottom circuits during the ELLPE technique does not exceed 400 ?, therefore allowing monolithic 3D integration of ICs.

Automated summary

This letter proposes and demonstrates the growth of single-crystal Germanium (Ge) by elevated-laser-liquid-phase-epitaxy (ELLPE) and the fabrication of Ge Fin field-effect transistors (FinFETs) for monolithic three-dimensional integrated circuits (monolithic 3D ICs). The technique allows for the fabrication of single-crystalline (100) Ge film and FinFETs without random grain boundaries. The ELLPE Ge FinFETs exhibit superior performance and uniformity compared to poly-Ge FinFETs, and the maximum temperature during the ELLPE technique is below 400 ?, enabling monolithic 3D integration of ICs.