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Article
Engineering, Electrical & Electronic
Jie Zhang et al.
Summary: This research presents scaled ultrathin (about 3 nm) InGaO (IGO) thin film transistors (TFTs) with high-performance characteristics. The IGO channels, derived from atomic layer deposition (ALD), have a high In/Ga atomic ratio of approximately 86:14, resulting in a high electron mobility under a thin thickness. The IGO TFTs show excellent scaling behaviors and demonstrate good electrical characteristics, making them potential candidates for back-end-of-line (BEOL)-compatible monolithic 3D integration.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Zhiyu Lin et al.
Summary: In this study, an atomic layer deposited (ALD) zinc oxide (ZnO) transistor with low off-state leakage current (I-off) was investigated at high temperatures up to 147 degrees C. The results showed that low temperature deposition and post deposition annealing were effective in enhancing the performance of the ALD ZnO transistors. The achieved electrical properties, such as high mobility, on/off ratio, and low subthreshold slope, suggest that ALD ZnO is a promising channel material for low off-state leakage current device applications.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Wendong Lu et al.
Summary: In this study, back end of line (BEOL) compatible amorphous indium-gallium-zinc oxide (a-IGZO) transistors were successfully monolithically stacked on top of first-layer aIGZO-based analog/digital circuits. The second layer a-IGZO transistors demonstrated low thermal budget fabrication and exhibited ultralow subthreshold swing, leakage current, and high ON/OFF ratio. After 3-D integration, the performance of a-IGZO-based amplifiers and RO circuits in the first layer showed no significant degradation and achieved high voltage gain and oscillation frequency. This work proves the feasibility of monolithic stacking for a-IGZO-based transistors and circuits without performance degradation, indicating great potential for high-density and high-performance monolithic 3-D integration applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Mengwei Si et al.
Summary: Researchers have successfully fabricated high-performance indium oxide transistors with dimensions smaller than advanced silicon technologies using an industry-compatible atomic layer deposition process. This study is significant for improving integrated circuit performance and functionality.
NATURE ELECTRONICS
(2022)
Article
Nanoscience & Nanotechnology
Jeonga Lee et al.
Summary: The study found that doping with hydrogen (H) into oxygen sites (HO) can significantly improve the performance of amorphous In-Ga-Zn-Sn oxide (aIGZTO) thin-film transistors (TFTs).
ACS APPLIED MATERIALS & INTERFACES
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
Z. Wu et al.
Summary: The sub-gap Density-of-State (DoS) in IGZO thin-film transistors (TFT) is systematically investigated using a newly developed Light-assisted I-V Spectroscopy (LaIVs). The technique quantifies the changes in sub-gap DoS during electrical stress, and decouples the effects of charge trapping and gate-dielectric defects. The kinetics and acceleration factors of the sub-gap DoS are extracted, allowing for projection of I-V degradations under different stress conditions.
2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
Qiwen Kong et al.
Summary: In this study, we investigate the impact of hydrogen evolution on the reliability of IGZO FETs with HfO2 gate dielectric. We discover two distinct H states, observe a strong correlation between threshold voltage shift and channel length under negative bias stress, and propose a unified method to evaluate the transition time from the electron-trapping-dominated region to the H-dominated region. Additionally, we propose a unique feedback mechanism between H evolution and threshold voltage to explain the significant drop in the H-dominated region. Our physics-based model shows excellent agreement with experimental data.
2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM
(2022)
Article
Engineering, Electrical & Electronic
Mengfei Wang et al.
Summary: High-performance zinc oxide thin-film transistors (ZnO TFTs) were fabricated on Si substrate using atomic layer deposition (ALD), with a record high field-effect mobility (43.2 cm(2)/V·s) achieved after rapid thermal annealing (RTA) at 350 degrees C. The improved device performance is attributed to enhancements in the ZnO channel, interface, and reduction in oxygen vacancy ratio and interface trap density. The annealed ZnO device exhibited stable electrical performance from room temperature to 180 degrees C without failure.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Yu-Shien Shiah et al.
Summary: This study successfully fabricated ultrastable thin-film transistors with mobilities of 70 cm(2) (V s)(-1) by understanding the origins of instability in high-mobility amorphous oxide transistors. The research identified the sensitivity of amorphous oxide semiconductors to externally introduced impurities and defects, and explained the mechanism of how carbon-monoxide-related impurities affect the stability of high-mobility indium tin zinc oxide transistors.
NATURE ELECTRONICS
(2021)
Proceedings Paper
Engineering, Electrical & Electronic
A. Chasin et al.
Summary: The gate-dielectric significantly affects the Positive Bias Temperature Instability of IGZO TFTs, with the degradation process involving up to four different mechanisms. Optimizing the gate-dielectric can help IGZO TFTs achieve a record lifetime under specific test conditions.
2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
(2021)
Article
Multidisciplinary Sciences
K Nomura et al.
