期刊
IEEE ELECTRON DEVICE LETTERS
卷 44, 期 9, 页码 1408-1411出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2023.3299961
关键词
Logic gates; Nonvolatile memory; Radiative recombination; Doping; Wide band gap semiconductors; Stress; Pulse measurements; Wide-bandgap semiconductor; AlGaN/GaN heterojunction; non-volatile memory; charge trapping memory
A GaN-based non-volatile memory device with improved endurance, fast programming speed, and long retention time is proposed in this study. The endurance is improved by using a less destructive programming scheme based on back gate injection and reducing the doping concentration of the p-channel. The device can withstand over 1010 program/erase cycles and requires a -10V/200ns pulse for programming without compromising the retention time.
A GaN-based tunnel-oxide-free non-volatile memory device with fast program/erase (P/E) speed and a long retention time has been recently reported, but the high voltage for program still leads to a high electric field in the blocking oxide and thus limits the endurance. In this letter, we propose to improve the endurance by a less destructive program scheme based on back gate injection (BGI) and a reduced doping concentration of the p-channel. In the BGI process, holes in the p-channel can screen the electric field and thus alleviate the electrical stress to the blocking oxide, whereas the lower doping concentration can prolong the lifetime of the injected electrons from the back gate. As such, the memory is able to endure over 1010 P/E cycles and a -10-V/200-ns pulse is adequate for program, with an uncompromised long retention time.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据