In-Depth Investigation of Deep Ultraviolet MicroLED Geometry for Enhanced Performance

In this work, we demonstrate a straightforward and effective strategy, so called perimeter-to-area ratio (P/A ratio) engineering, to enhance the optical performance of deep-ultraviolet micro-scale LED (DUV mu-LEDs). Specifically, we designed and fabricated three types of DUV mu-LEDs architectures with circle, pentagon, and quadrangle shapes which possess different P/A ratios, and found that the external quantum efficiency (EQE) of the quadrilateral mu-LEDs exhibit the highest value thanks to its largest P/A ratio in the LED mesa covered by the p-electrode, leading to a higher light output power than that of mu-LED in circle shape by 29.2% at an injection current density of 3000 A/cm(2). More importantly, such superior performance due to the increased P/A ratio of mu-LEDs is becoming more remarkable when the size of mu-LEDs further shrinks, attributing to a larger light extraction, more uniform current spreading, and better sidewall out-radiation of self-generated heat of the mu-LEDs.

Automated summary

In this work, a strategy called perimeter-to-area ratio (P/A ratio) engineering is used to enhance the optical performance of deep-ultraviolet micro-scale LED (DUV mu-LEDs). Different shapes of DUV mu-LEDs were designed and fabricated, and it was found that the quadrilateral mu-LEDs with the largest P/A ratio exhibited the highest external quantum efficiency (EQE) and light output power. The increased P/A ratio also led to better performance in smaller-sized mu-LEDs through improved light extraction, current spreading, and sidewall out-radiation of self-generated heat.