10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200?

This work demonstrates a lateral Ga2O3 Schottky barrier diode (SBD) with a breakdown voltage (BV) over 10 kV, the highest BV reported in Ga2O3 devices to date. The 10 kV SBD shows good thermal stability up to 200 degrees C, which is among the highest operational temperatures reported in multi-kilovolt Ga2O3 devices. The key device design for achieving such high BV is a reduced surface field (RESURF) structure based on the p-type nickel oxide (NiO), which balances the depletion charges in the n-Ga2O3 channel at high voltage. At BV, the charge balanced Ga2O3 SBD shows an average lateral electric field (E-field) over 4.7 MV/cm at 25 degrees C and over 3.5 MV/cm at 200 degrees C, both of which exceed the critical E-field of GaN and SiC. The 10 kV SBD shows a specific on-resistance of 0.27 O.cm(2) and a turn-on voltage of 1 V; at 200 degrees C, the former doubles and the latter reduces to 0.7 V. These results suggest the good potential of Ga2O3 devices for medium and high-voltage, high-temperature power applications.

Automated summary

This study presents a lateral Ga2O3 Schottky barrier diode (SBD) with a record-breaking breakdown voltage (BV) of over 10 kV. The 10 kV SBD exhibits excellent thermal stability up to 200 degrees C, making it one of the highest operational temperatures achieved for Ga2O3 devices at multi-kilovolt levels. The key to achieving such high BV lies in the reduced surface field (RESURF) structure based on p-type nickel oxide (NiO), which effectively balances the depletion charges in the n-Ga2O3 channel at high voltage.