☆ 4.4 Article

Evolution of Microcracks in Epitaxial CeO2 Thin Films on YSZ-Buffered Si

ELECTRONIC MATERIALS LETTERS (2023)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Article Materials Science, Coatings & Films

Epitaxial growth of high-quality yttria-stabilized zirconia films with uniform thickness on silicon by the combination of PLD and RF sputtering

Pengfei Qu et al.

Summary: High-quality (100)-oriented yttria-stabilized zirconia (YSZ) films with uniform thickness were epitaxially grown on silicon substrates by a two-step process of pulsed laser deposition (PLD) and radio-frequency magnetron sputtering (RFS). The YSZ film can be epitaxially grown at 200 degrees C in the presence of a YSZ-seed layer.

SURFACE & COATINGS TECHNOLOGY (2023)

添加到收藏夹

Article Materials Science, Multidisciplinary

Selective Area Epitaxy of Complex Oxide Heterostructures on Si by Oxide Hard Mask Lift-Off

Ruiguang Ning et al.

Summary: Epitaxial complex oxide heterostructures on Si are an excellent platform for multifunctional electronic devices. This study reports a method for the selective area epitaxial growth of complex oxide heterostructures on Si using a hard mask lift-off technique. By using a water-soluble oxide as a lift-off hard mask, the complex oxide can be grown at high temperatures and oxidizing environments, and subsequently selectively etched away using deionized water.

ELECTRONIC MATERIALS LETTERS (2023)

添加到收藏夹

Review Materials Science, Multidisciplinary

Epitaxial Growth of Alpha Gallium Oxide Thin Films on Sapphire Substrates for Electronic and Optoelectronic Devices: Progress and Perspective

Duyoung Yang et al.

Summary: This paper comprehensively reviews the demand for high-efficient and robust power semiconductors in harsh environments, and the potential of using gallium oxide (Ga2O3) as a material. The focus of the paper is on the epitaxial growth of alpha-Ga2O3 thin films and the fabrication of related devices.

ELECTRONIC MATERIALS LETTERS (2022)

添加到收藏夹

Article Physics, Applied

High output performance of piezoelectric energy harvesters using epitaxial Pb(Zr, Ti)O3 thin film grown on Si substrate

Eun-Ji Kim et al.

Summary: This study proposes an energy harvesting device made of an epitaxial PZT thin film on a silicon substrate. The device has a large direct piezoelectric coefficient and a small relative permittivity constant, enabling high power density in piezoelectric energy harvesters. Experimental results show that the device has high output power and power density at resonant frequency and acceleration, making it suitable for high power energy harvesting applications.

APPLIED PHYSICS LETTERS (2022)

添加到收藏夹

Article Materials Science, Multidisciplinary

Thermal stress-assisted annealing to improve the crystalline quality of an epitaxial YSZ buffer layer on Si

Hyung-Jin Choi et al.

Summary: In this study, a simple annealing technique was reported to significantly improve the crystalline quality of YSZ on Si substrates by utilizing thermal stresses and the difference in thermal expansion coefficients. High-quality epitaxial CeO2 and Y:HfO2 thin films were successfully integrated on YSZ/Si substrates using this method.

JOURNAL OF MATERIALS CHEMISTRY C (2022)

添加到收藏夹

Article Materials Science, Multidisciplinary

GaAsBi Quantum Dots for 1.55 μm Laser Diode

Mingxuan Zhang et al.

Summary: A method for fabricating 1.55 μm laser diodes using GaAsBi quantum dot/InAlAs structure was proposed, with high Bi contents and large QD sizes beneficial for achieving long wavelengths, and low Bi contents with proper QD sizes able to emit light at 1.55 μm. The proposed structure can be realized by migration enhanced epitaxy and droplet epitaxy, providing a feasible way for fabricating GaAsBi based 1.55 μm laser diodes for fiber-optic communications.

ELECTRONIC MATERIALS LETTERS (2021)

添加到收藏夹

Article Materials Science, Multidisciplinary

Study on the Variation of Surface Morphology and Residual Stress Under Various Thermal Annealing Conditions with Bulk GaN Substrates Grown by HVPE

Hee Ae Lee et al.

Summary: The study found that GaN surface can undergo thermal decomposition and oxidation under different thermal treatment conditions, with 900 degrees C annealing for 3 hours being the most effective in releasing internal residual stress and ensuring the best crystal quality.

ELECTRONIC MATERIALS LETTERS (2021)

添加到收藏夹

Article Physics, Applied

Poisson ratio and bulk lattice constant of (Sr0.25La0.75)CrO3 from strained epitaxial thin films

Dong Han et al.

JOURNAL OF APPLIED PHYSICS (2019)

添加到收藏夹

Article Multidisciplinary Sciences

Growth mechanism of epitaxial YSZ on Si by Pulsed Laser Deposition

David Dubbink et al.

SCIENTIFIC REPORTS (2018)

添加到收藏夹

Article Engineering, Electrical & Electronic

Epitaxial PMnN-PZT/Si MEMS ultrasonic rangefinder with 2 m range at 1 V drive

Zhen Zhou et al.

SENSORS AND ACTUATORS A-PHYSICAL (2017)

添加到收藏夹

Article Nanoscience & Nanotechnology

Strain-relaxation and critical thickness of epitaxial La1.85Sr0.15CuO4 films

T. L. Meyer et al.

APL MATERIALS (2015)

添加到收藏夹

Article Materials Science, Multidisciplinary

Growth mechanisms of ceria- and zirconia-based epitaxial thin films and hetero-structures grown by pulsed laser deposition

Daniele Pergolesi et al.

MATERIALS FOR RENEWABLE AND SUSTAINABLE ENERGY (2013)

添加到收藏夹

Article Chemistry, Multidisciplinary

Mechanisms of epitaxy and defects at the interface in ultrathin YSZ films on Si(001)

Patricia de Coux et al.

CRYSTENGCOMM (2012)

添加到收藏夹

Article Chemistry, Physical

Molecular dynamics simulation of reduced CeO2

Zhiwei Cui et al.

SOLID STATE IONICS (2012)

添加到收藏夹

Article Chemistry, Physical

Structural and optical properties of YSZ thin films grown by PLD technique

S. K. Pandey et al.

APPLIED SURFACE SCIENCE (2011)

添加到收藏夹

Article Chemistry, Physical

Epitaxial 0.65PbMg1/3Nb2/3O3-0.35PbTiO3 (PMN-PT) thin films grown on LaNiO3/CeO4/YSZ buffered Si substrates

Juan Jiang et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2011)

添加到收藏夹

Article Physics, Applied

Ferroelectric properties of epitaxial Pb(Zr, Ti)O3 thin films on silicon by control of crystal orientation

Matthijn Dekkers et al.

APPLIED PHYSICS LETTERS (2009)

添加到收藏夹

Article Crystallography

Strain relaxation and critical thickness for epitaxial LaAlO3 thin films grown on SrTiO3(001) substrates by molecular beam epitaxy

C. Merckling et al.

JOURNAL OF CRYSTAL GROWTH (2007)

添加到收藏夹

Article Materials Science, Coatings & Films

Growth and stress evolution of hafnium nitride films sputtered from a compound target

MY Liao et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2004)

添加到收藏夹

Article Thermodynamics

Linear thermal expansion coefficient of silicon from 293 to 1000 K

H Watanabe et al.

INTERNATIONAL JOURNAL OF THERMOPHYSICS (2004)

添加到收藏夹

Article Materials Science, Ceramics

Thermal expansion of rare-earth-doped ceria ceramics

S Sameshima et al.

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN (2002)

添加到收藏夹

Article Materials Science, Multidisciplinary

RF-magnetron-sputtered heteroepitaxial YSZ and CeO2/YSZ/Si(001) thin films with improved capacitance-voltage characteristics

N Wakiya et al.

THIN SOLID FILMS (2002)

添加到收藏夹

Article Engineering, Electrical & Electronic

Epitaxial growth of yittria-stabilized zirconia oxide thin film on natively oxidized silicon wafer without an amorphous layer

SJ Wang et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2000)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.