期刊
CRYSTAL GROWTH & DESIGN
卷 23, 期 11, 页码 8290-8295出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.cgd.3c00972
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Heteroepitaxial growth of beta-Ga2O3 on (001) diamond by MOCVD was achieved, and the epitaxial relationship and crystal structure were studied using TEM.
Heteroepitaxial growth of beta-Ga2O3 on (001) diamond by metal-organic chemical vapor deposition (MOCVD) is reported. A detailed study was performed with Transmission Electron Microscopy (TEM) elucidating the epitaxial relation of (-201) beta-Ga2O3 parallel to(001) diamond and [010]/[-13-2] beta-Ga2O3 parallel to|[110]/[1-10] diamond, with the presence of different crystallographically related epitaxial variants apparent from selected area diffraction patterns. A model explaining the arrangement of atoms along < 110 > diamond is demonstrated with a lattice mismatch of 1.03-3.66% in the perpendicular direction. Dark field imaging showed evidence of arrays of discrete defects at the boundaries between different grains. Strategies to reduce the density of defects are discussed.
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