4.6 Article

High magnetic field effects on transport coefficients in heavily doped n-type Mg2Si

期刊

CHINESE JOURNAL OF PHYSICS
卷 86, 期 -, 页码 313-322

出版社

ELSEVIER
DOI: 10.1016/j.cjph.2023.09.018

关键词

Magneto-Seebeck coefficient; Nernst coefficient; Heavily doped semiconductor; Magneto-thermoelectricity

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In contrast to the traditional parabolic band model, this study confirms that the non-parabolic band model provides a better understanding of the Seebeck coefficient and Nernst coefficient in the presence of a magnetic field for Mg2Si. The Magneto Seebeck coefficient is significantly enhanced under high magnetic fields, while the Nernst coefficient shows a varying trend in both models.
In contrast to parabolic band model typically used in understanding electronic properties in general, thermoelectric and magneto-thermoelectric in particular, this study confirms non-parabolic band model results in better understanding of Seebeck coefficient and Nernst coefficient in the presence of magnetic field for Mg2Si. The magneto Seebeck coefficient was found significantly enhanced from its zero-field value for non-parabolic band model compared to parabolic band model for different electron concentrations in the range 0.6 -12x 1025/m3 and at room temperature due to the high magnetic field slightly beyond |3|T, but not for others. In both cases, the Seebeck coefficient is enhanced as a result of the magnetic field. The result for Nernst coefficient shows increasing trend in high magnetic field in the range |3-9|T for parabolic band model while it is decreasing with magnetic field on average for non-parabolic band model except for few of them slowly increasing.

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