4.8 Article

Quinoidal Acenedichalcogenophenediones for Near-Infrared-Absorbing Organic Semiconductors: Effects of Chalcogen Atom Substitution on the Physicochemical and Carrier Transport Properties

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CHEMISTRY OF MATERIALS
卷 35, 期 18, 页码 7628-7642

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AMER CHEMICAL SOC
DOI: 10.1021/acs.chemmater.3c01350

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By synthesizing and studying D-A-D triad molecules using the donor-acceptor approach, it was found that a highly electron deficient acceptor unit lowers the LUMO energy level, reduces the optical energy gap, and maintains low-lying frontier orbital energy levels. Two isoelectronic series incorporating different chalcogen atoms were investigated, and the oxygen analogues exhibited superior carrier transport properties compared to the sulfur and selenium analogues.
To develop near-infrared (NIR) absorbing organic semiconductors via the donor-acceptor approach, a highly electron deficient acceptor unit that lowers the LUMO energy level is important to reduce the optical energy gap while keeping its low-lying frontier orbital energy levels. Here, we synthesized and investigated donor-acceptor-donor (D-A-D) triad molecules incorporating two isoelectronic series of benzo[1,2-b:4,5-b']dichalcogenophene-2,6-diones and naphtho[1,2-b:5,6-b']dichalcogenophene-2,7-diones having different chalcogen atoms, namely, oxygen, sulfur, and selenium atoms. Optical and electrochemical measurements revealed that the triad molecules have low-lying HOMO and LUMO energy levels below -5.0 and -4.0 eV, respectively, with small optical energy gaps of down to 0.76 eV. The key structural feature for the small optical energy gaps is the carbonyl-terminated p-quinodimethane and 2,6-naphthoquinodimethane skeletons in the acenedichalcogenophenediones, which facilitate intramolecular charge transfer from the donor to acceptor units regardless of the chalcogen atoms. On the other hand, the field-effect hole and electron mobilities of the thin-film transistor devices based on the oxygen analogues (similar to 10(-1) cm(2) V-1 s(-1)) were one order of magnitude higher than those of the sulfur and selenium analogues (similar to 10(-2) cm(2) V(-1)s(-1)). Systematic investigation of the crystal structures, thin-film microstructures, and melting points as well as theoretical calculations revealed that the oxygen analogues have significantly high coplanarity and rigidity of the DA-D p-conjugated backbone resulting in the low structural and/or energetic disorder in the solid state, which is a reason for the superior carrier transport properties to those of the sulfur and selenium analogues. These molecular insights are helpful for the development of superior donor-acceptor NIR-absorbing organic semiconductors.

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