Wafer-Scale Performance Mapping of Magnetron-Sputtered Ternary Vanadium Tungsten Nitride for Microsupercapacitors

To power Internet-of-Things applications, new materials are currently being investigated as efficient electrodes for microsupercapacitors. In recent years, multicationic materials were demonstrated to be an attractive new class of materials for electrodes. In this study, we deposited vanadium tungsten nitride by cosputtering. Our film shows excellent electrochemical performance, a capacitance of 700 Fcm(-3), and no loss in capacitance retention after 5000 cycles. In addition, the properties of the film were investigated in many aspects using advanced characterization and mapping techniques. Our approach opens new perspectives and provides a powerful characterization

Automated summary

In this study, a vanadium tungsten nitride film was deposited by cosputtering as an efficient electrode for microsupercapacitors. The film exhibited excellent electrochemical performance with a capacitance of 700 Fcm(-3), and no loss in capacitance retention after 5000 cycles. Advanced characterization and mapping techniques were utilized to investigate the properties of the film.