4.7 Article

Triple-halide wide-bandgap perovskites tailored via facile organic halide treatment for high-performance perovskite/Cu(In,Ga)Se2 tandem solar cells

期刊

CHEMICAL ENGINEERING JOURNAL
卷 476, 期 -, 页码 -

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.cej.2023.146825

关键词

Defect passivation; Perovskite solar cell; Copper indium gallium selenide; Tandem cell

向作者/读者索取更多资源

A facile fabrication strategy of highly efficient and stable wide-bandgap perovskites (PVSKs) was demonstrated through an organic halide surface treatment. The surface post-treatment resulted in the complete conversion of PVSK crystallinity, eliminating segregated secondary phases and reducing unreacted PbI2. The reconstructed PVSK showed enhanced photovoltaic performance and high stability, achieving a power conversion efficiency of 24.5% in a tandem device.
Wide-bandgap (Eg) perovskites (PVSK) are important materials for realizing high-efficiency tandem devices that surpass the efficiency limit of single-junction solar cells. However, they suffer from phase separation and opencircuit voltage (Voc) loss. This study demonstrated a facile fabrication strategy of highly efficient and stable wideEg PVSKs through an organic halide surface treatment with formamidinium bromide to CH3NH3PbI3-xClx. The concurrent diffusion of organic cations and halide ions from the surface into bulk PVSK results in the complete conversion of the PVSK crystallinity to a cubic phase, eliminating segregated secondary phases and reducing unreacted PbI2. Br incorporation induces halide redistribution, resulting in the formation of triple-halide wide-Eg PVSK. The complete reconstruction of the bulk and surface of PVSK by surface post-treatment suppresses trapinduced nonradiative recombination and decreases the Urbach tail energy. Inverted PVSK solar cells based on the reconstructed PVSK exhibit enhanced photovoltaic performance with a low Voc deficit and high stability. In addition, we demonstrated a four-terminal (4-T) tandem device based on the triple-halide wide-Eg PVSK as a top cell combining with a Cu(In,Ga)Se2 bottom cell, achieving a power conversion efficiency of 24.5 %.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.7
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据