High-entropy alloy: An alternative approach for high temperature microwave-infrared compatible stealth

To achieve microwave-infrared compatible stealth in high temperature conditions, high-entropy alloys (HEAs) thin films were deposited on Al2O3 matrix by magnetron sputtering technology. Films were annealed to inves-tigate thermal stability at 500 & DEG;C, 600 & DEG;C and 700 & DEG;C, respectively. Results from X-ray diffract meter (XRD), atomic force microscope (AFM), scanning electron microscope (SEM), and Fourier transform infrared spec-trometer (FTIR) suggested that high-entropy alloy (HEA) film was seriously oxidized when the annealed tem-perature reached 700 & DEG;C for 6 h, causing a significant decrease of infrared reflectivity. Conversely, HEA films showed low infrared emissivity of 0.09 at 600 & DEG;C. Additionally, the films possessed excellent thermal stability at 500 & DEG;C for 20 h with low infrared emissivity of 0.11. Finally, a simple metamaterial design utilizing HEA films was proposed for infrared-microwave compatible stealth. With the ability of incorporating excellent thermal stability and durable high temperature stealth performance, the study shows great potential of introducing HEAs in the field of high temperature compatible stealth.

Automated summary

In order to achieve microwave-infrared compatible stealth in high temperature conditions, thin films of high-entropy alloys (HEAs) were deposited on an Al2O3 matrix using magnetron sputtering technology. The thermal stability of the films was investigated through annealing at temperatures of 500°C, 600°C, and 700°C. The results showed that the HEA film was severely oxidized at 700°C for 6 hours, leading to a significant decrease in infrared reflectivity. However, the HEA films exhibited low infrared emissivity of 0.09 at 600°C and excellent thermal stability at 500°C for 20 hours with low infrared emissivity of 0.11. A simple metamaterial design utilizing HEA films was proposed for infrared-microwave compatible stealth. The study demonstrates the great potential of introducing HEAs in the field of high temperature compatible stealth due to their excellent thermal stability and durable high temperature stealth performance.