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Article
Chemistry, Physical
Chiou-Ru Cheng et al.
Summary: LaYO3 thin films were deposited using RF sputtering, and the resistive switching properties of LaYO3-based RRAM devices were investigated. The study focused on the impact of sputtering time, top electrode materials, deposition conditions, annealing temperature, and annealing processes on the resistive switching characteristics. The research revealed that conductive filaments were mainly controlled by oxygen vacancies, which could be manipulated through the deposition atmosphere and annealing process. The diffusion of In ions from an indium tin oxide substrate into the LaYO3 layer during annealing enhanced the formation of conductive filaments. The Schottky barrier height under different top electrodes and deposition atmospheres also influenced filament formation. Additionally, post-metal annealing helped form an AlOx interface layer, significantly improving the resistive switching performance of LaYO3-based RRAMs. The devices annealed at 400 degrees C exhibited resistive switching characteristics for over 1200 cycles and a R-on/R-off ratio of 103, demonstrating promise for non-volatile memory applications.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Energy & Fuels
Sichen Qin et al.
Summary: This paper establishes a numerical model of filament dissolution caused by the coupling effect of Joule heat and electric field in resistance elements, and explains the influence of the thermal field on the electric field and ion mobility during device setup and reset by solving partial differential equations. On this basis, the importance of electrode parameters for resistive switching behavior is emphasized. The results show that the best performance can be obtained at 298 K when TiN is selected as the top electrode material of the equipment. This work deepens the understanding of RRAM resistance switch characteristics and has guiding significance for selecting memristor materials and promoting its industrialization process.
Article
Physics, Applied
Writam Banerjee et al.
Summary: This paper discusses the essential criteria for training and inference in non-von Neumann computing architectures, focusing on various nonvolatile neuromorphic systems. The authors provide a holistic analysis of technical requirements and evaluate the prospect of futuristic neuromorphic hardware systems by optimizing the training and inference dilemma.
APPLIED PHYSICS LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Ruofei Hu et al.
Summary: This paper investigates two distinct types of resistive switching in Ti/TiOx/Pd-based RRAM devices: filamentary resistive switching and dynamic resistive switching. Filamentary resistive switching is caused by spikes in the bottom Pd electrode, while dynamic resistive switching occurs when the bottom electrode is flat without spikes, resulting in dynamic changes in device resistance over time.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Vidit Pandey et al.
Summary: This study demonstrated the bipolar resistive switching phenomenon in Mn3O4 using an aluminium/Mn3O4/fluorine-doped tin oxide resistive random access memory (RRAM) device. It explored conduction mechanisms, thermal activation energy, and temperature coefficient of resistance, showing potential application in future high-density non-volatile memory RRAM devices.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
(2022)
Review
Chemistry, Multidisciplinary
Writam Banerjee et al.
Summary: This review surveys the application of HfO2 in emerging nonvolatile memory technologies, namely resistive random access memory and ferroelectric memory. The properties of HfO2 and its control parameters are discussed, along with the prospects and challenges in future applications.
Review
Chemistry, Analytical
Haider Abbas et al.
Summary: With the rapid increase in data volume, there is a growing need for new memory technologies and computing systems. CBRAM, as an emerging technology, offers great opportunities for future memory and neuromorphic computing applications. This review thoroughly explores the principles, applications, challenges, and simulations of biological synapses and neurons using CBRAM devices fabricated with various materials and device engineering approaches.
Article
Materials Science, Multidisciplinary
Seokyeon Yun et al.
Summary: In this study, the volatile and non-volatile traits of the Pt/TaOx/TiN device were identified through various electrical experiments. The device was shown to function as a memristor. The results demonstrated that the device could be utilized as short-term memory at low currents and as non-volatile memory within a neuromorphic system at higher currents. The conduction mechanism was also investigated, and it was determined that Space-Charge-Limited-Current (SCLC) dominated the high resistive state in the reset mechanism.
RESULTS IN PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
Yue Peng et al.
Summary: This study demonstrates a hybrid 1T-1C HZO-DRAM/FRAM (D-FRAM) that can operate in non-volatile memory (NVM) and DRAM modes at the 130 nm node. The D-FRAMarray exhibits excellent data retention characteristics in NVM mode. The DRAM mode achieves low operation voltage and improved endurance by eliminating polarization switching. Furthermore, the unified hardware structure of the hybrid D-FRAM enables low latency and low power data movement in the hybrid arrays.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Physics, Applied
Yiwei Duan et al.
Summary: This paper reports on the Pt/AlOxNy/Ta structure with Ta as a top electrode, which aims to achieve excellent data storage and artificial synaptic function. The interface layer between the RS layer and TE, known as TaOx, plays a crucial role in determining the RS characteristics by affecting thermal and electrical conductivities. Factors such as properties of the interface layer, Joule heating, and electric field distribution on the interface layer are found to be the main factors affecting the bipolar gradual RS behavior.
APPLIED PHYSICS LETTERS
(2022)
Article
Materials Science, Ceramics
Osung Kwon et al.
Summary: In this study, we demonstrate the short-term memory effects of an Ag/SnOx/TiN memristor device in a neuromorphic system. The thickness and chemical properties of the SnOx layer are investigated, and non-volatile and volatile memory properties are determined by the forming process. The study also explores the conductance change and paired-pulse facilitation characteristics, and successfully implements high-performance reservoir computing.
CERAMICS INTERNATIONAL
(2022)
Article
Chemistry, Physical
Yu-Ta Chen et al.
Summary: The resistive switching characteristics of amorphous Sm2Ti2O7 thin films prepared by RF sputtering and the effect of post-metallization annealing (PMA) were investigated. The results showed that PMA treatment improved the resistive switching properties by forming an AlOx interface layer. The study provides potential applications for non-volatile memory.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Chemistry, Physical
Osung Kwon et al.
Summary: In this paper, the memory characteristics of Ag/AlN/TiN devices for neuromorphic systems were investigated. The thickness and components of the device stack were verified using TEM and EDS. The long-term memory (LTM) and short-term memory (STM) characteristics were determined by compliance current (CC), with LTM characteristics observed at high CC and STM characteristics observed at low CC. The I-V curves and potentiation and depression for LTM characteristics were studied. The switching and conduction mechanisms of Ni/Ag/AlN/TiN devices were analyzed using schematic drawings and energy band diagrams. The linearity of potentiation and depression was compared, and the accuracy of Modified National Institute of Standards and Technology (MNIST) pattern was evaluated based on the linearity.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Chemistry, Physical
Jongmin Park et al.
Summary: In this study, we developed a W/HfO2/TiN vertical resistive random-access memory (VRRAM) for neuromorphic computing. The basic electrical properties, conduction mechanism, and current behavior relative to temperature were investigated. The practicality of the device was evaluated using a convolutional neural network, and 8-bit reservoir computing with higher efficiency was achieved.
Article
Engineering, Electrical & Electronic
Elassaad Jemii et al.
Summary: The electrothermal behavior of Cu/ZrO2/Pt conductive bridge random access memory (CBRAM) was investigated using the dual-phase-lag thermal model. The effects of conductive filament (CF) geometry and applied voltage on internal temperature and electric field distribution were studied. The results showed that the dual-phase-lag model provided more accurate assessment of the thermoelectric behavior and design of CBRAM memory.
JOURNAL OF COMPUTATIONAL ELECTRONICS
(2022)
Article
Chemistry, Multidisciplinary
Hea-Jee Kim et al.
Summary: A selector with multiple conductive Cu filaments is designed to improve the learning and inference efficiencies of an artificial neural network. By preventing sneak currents in the synaptic memristor array, the classification accuracy is increased.
ADVANCED MATERIALS
(2022)
Article
Chemistry, Physical
Muhammad Ismail et al.
Summary: The study demonstrates that Pt/TiOx/AlOx/AlTaON/TaN multilayer RRAM devices exhibit stable behavior with a large on/off resistance window and excellent durability, making them suitable for future information storage and neuromorphic computing applications.
APPLIED SURFACE SCIENCE
(2022)
Article
Computer Science, Information Systems
Srikant Kumar Mohanty et al.
Summary: This work investigates the effect of the tungsten nitride (WNx) diffusion barrier layer on the resistive switching operation of aluminum nitride (AlN) based conductive bridge random access memory. The results show that inserting a barrier layer can limit the diffusion of Cu ions, control the formation of metallic conductive filament, reduce the spatial and temporal switching variability, and improve the data retention behavior.
Article
Engineering, Multidisciplinary
Lalit Kumar Lata et al.
Summary: This article reports an approach for enhancing the characteristics of resistive switching in crystalline Hafnium oxide-based CBRAM devices. The use of crystalline Hafnium oxide resistive switching layer and TiW blocking layer helps control filament growth and improve resistive parameters. The proposed bipolar device also demonstrates improved memory performance.
ENGINEERING RESEARCH EXPRESS
(2022)
Article
Nanoscience & Nanotechnology
Yunseok Lee et al.
Summary: This study investigates resistance-based memory devices and demonstrates that different characteristics can be controlled by DC voltages. The reliability of the device is confirmed through experiments, and its functionality as a synaptic device is also verified.
NANOSCALE RESEARCH LETTERS
(2022)
Review
Nanoscience & Nanotechnology
Cheng Zhang et al.
Summary: This review provides an overview of the structural, photoelectronic properties, and device fabrication technologies of organic-inorganic hybrid perovskites (OHPs). It discusses the recent progress and applications of OHPs in resistive random-access memory (RRAM), artificial synapses, and logic operation. The operational mechanisms, performance improvement strategies, challenges, and future development prospects of OHPs-based devices are also summarized.
Article
Nanoscience & Nanotechnology
Chandreswar Mahata et al.
Summary: In this study, controlled conductive filament formation in resistive random access memory (RRAM) devices was achieved, demonstrating conductance quantization behavior for high-density memory applications. The use of reactive TiN-NPs inside the switching layer helped to form and rupture atomic scale conductive filaments, leading to quantized conductance states with promising synaptic properties. The experiments showed stable endurance, bipolar resistive switching characteristics, and successful short-term and long-term plasticities, suggesting the potential of HfAlOx/TiN-NP/HfAlOx switching layer for multilevel high-density storage RRAM devices.
NANOSCALE RESEARCH LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Priyanka Apsangi et al.
Summary: This study implements pattern recognition using deep neural networks (DNN) with resistive RAM (RRAM) devices. The conductance linearity response of Ag-chalcogenide based conductive bridge RAM (CBRAM) devices is analyzed under different pulsing schemes, and it is found that the devices exhibit improved linearity with non-identical pulse application. The effect of this improved linearity is quantified by simulating the devices in an artificial neural network, and a significant increase in classification accuracy is observed.
NEUROMORPHIC COMPUTING AND ENGINEERING
(2022)
Article
Chemistry, Physical
Muhammad Ismail et al.
Summary: The study on electronic synaptic plasticity and analog bipolar switching behavior in a Pt/TiOx/AlOx/AlTaON/TaN multilayer resistive random-access memory (RRAM) device revealed the importance of oxygen vacancies in the film for uniform resistive switching properties. The device showed stable behavior with a large resistance window, excellent endurance, and retention period, making it suitable for neuromorphic systems. The redox reaction played a key role in analog bipolar switching behavior, indicating the potential use of multilayer RRAM devices for future information storage and neuromorphic computing.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Physical
Muhammad Ismail et al.
Summary: The study shows that the Pt/TiOx/AlOx/AlTaON/TaN multilayer RRAM device exhibits stable RS behavior with a very large on/off resistance window, making it suitable for future information storage and neuromorphic computing.
APPLIED SURFACE SCIENCE
(2022)
Article
Nanoscience & Nanotechnology
Nils Kopperberg et al.
Summary: The major challenges of resistive switching random access memories based on the valence change mechanism (VCM) are short-term instability and long-term retention failure, which are caused by read noise and physical processes of diffusion. A three-dimensional kinetic Monte Carlo simulation model is introduced to explain the instability and retention failure consistently, showing that random diffusion of oxygen vacancies plays a crucial role in the reliability of VCMs. The results of the simulations are compared with experimental data, providing insights into improving the reliability of VCM devices.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Materials Science, Multidisciplinary
Lilan Zou
Summary: The flexible Ag/TiO2/ITO/PET resistive switching memory, prepared by low-temperature sol-gel method with UV irradiation, displays good resistive behavior and multilevel resistance states. It shows potential for applications in neural networks and high-density storage, as well as good flexibility under bending conditions. Conductive mechanisms such as SCLC and Ohmic mechanism are analyzed, and the memory has potential applications in wearable and foldable electronics.
CURRENT APPLIED PHYSICS
(2021)
Article
Chemistry, Multidisciplinary
Writam Banerjee et al.
Summary: This study demonstrates a hyper-level control of metal-ion migration through vacancy-induced-percolation (VIP) path to maximize the steep-slope performance of the threshold selector with excellent selectivity and endurance. Highly efficient control over metal-ion migration through VIP is achieved with sophisticated stack engineering through the material evolution process and refined electrical operation. Thorough analysis of the energetics of metal-ion- and vacancy-based hybrid filament is performed using density functional theory calculations, leading to proper tuning of the biasing scheme.
ADVANCED FUNCTIONAL MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Wei Wang et al.
Summary: Understanding the switching and retention processes of the Ag-based metallic filamentary volatile resistive switching devices is crucial for optimizing their performance. The study reveals that the switching process can be modeled by ionic drift under electric field, while the retention process can be modeled by ionic diffusion along the filament surface driven by the gradient of surface atomic concentration. Further theoretical analysis unifies ionic drift and diffusion within the general Einstein relation, and the read voltage dependent retention time is explained by the competition between ionic drift and diffusion flux.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Meiran Zhao et al.
Summary: This article focuses on characterizing the retention of output differential and accumulation current in analog RRAM arrays for CIM applications, specifically looking at the impact of crossbar-level weighted-sum currents on accuracy loss over time. Comparing simulation accuracy based on short-term device-level tests with computing accuracy values based on crossbar-level characterizations, it was found that the latter provided improved accuracy and matched well with measured accuracy, indicating that crossbar-level retention evaluation is more accurate. This work provides insights for developing RRAM-based CIM systems with excellent reliability.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Materials Science, Multidisciplinary
Y. N. Tsai et al.
Summary: In this study, resistive random-access memory (RRAM) devices with a metal-insulator-metal structure were fabricated on polyimide substrates of varying thicknesses, with an insulating layer of zinc oxide deposited using the sol-gel method. Bending tests showed that the operating electric field increased and retention time decreased, but devices with thicker polyimide substrates were less affected. These findings will help enhance the characteristics of RRAMs on flexible substrates.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2021)
Article
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Hye-Won Yun et al.
CURRENT APPLIED PHYSICS
(2020)
Review
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Zongjie Shen et al.
Review
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Writam Banerjee
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Chih-Yang Lin et al.
Article
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Sungjoon Kim et al.
APPLIED PHYSICS LETTERS
(2020)
Article
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Hojeong Ryu et al.
Editorial Material
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Wei Zhang et al.
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(2019)
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Daniele Ielmini
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IEEE ELECTRON DEVICE LETTERS
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IEEE TRANSACTIONS ON ELECTRON DEVICES
(2016)
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IEEE TRANSACTIONS ON ELECTRON DEVICES
(2016)
Review
Nanoscience & Nanotechnology
Cheol Seong Hwang
ADVANCED ELECTRONIC MATERIALS
(2015)
Article
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Chaoyi Yan et al.
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(2014)
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(2011)
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COMPTES RENDUS PHYSIQUE
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