☆ 4.7 Article

Towards modeling of ZrO2 atomic layer deposition at reactor scale based on experimental kinetic approximation

APPLIED SURFACE SCIENCE (2024)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Article Chemistry, Physical

Role of Temperature, Pressure, and Surface Oxygen Migration in the Initial Atomic Layer Deposition of HfO2 on Anatase TiO2 (101)

Giulio D'Acunto et al.

Summary: This study investigates the atomic layer deposition of HfO2 on a TiO2 (101) surface using in situ vacuum X-ray photoelectron spectroscopy (XPS) and time-resolved ambient pressure XPS. It is found that in the initial stages of ALD, a dissociative adsorption mechanism dominates over a classic ligand exchange mechanism, and the formation of surface species is influenced by the active role of the TiO2(101) surface. Furthermore, an insertion reaction of a hydrogen atom enhances the formation of HfO2 beyond the expected monolayer. The dosing of water at high pressure leads to hydroxyl formation, indicating a transition towards a ligand exchange reaction type.

JOURNAL OF PHYSICAL CHEMISTRY C (2022)

添加到收藏夹

Article Chemistry, Physical

Role of Cyclopentadienyl Ligands of Group 4 Precursors toward High-Temperature Atomic Layer Deposition

Tran Thi Ngoc Van et al.

Summary: This research employs density functional theory calculations to elucidate the role of Cp ligands in group 4 (Ti, Zr, Hf) precursors for high-temperature ALD and their thermal stability. The findings suggest that the introduction of Cp ligands enhances the thermal stability of the precursors and makes it more difficult for precursors with Cp ligands to adsorb on the partially decomposed precursor-on-surface.

JOURNAL OF PHYSICAL CHEMISTRY C (2022)

添加到收藏夹

Article Materials Science, Coatings & Films

Surface reaction of the hafnium precursor with a linked amido-cyclopentadienyl ligand: A density functional theory study

Romel Hidayat et al.

Summary: The study suggests that Hf precursors with a linked ligand exhibit better thermal stability and reactivity compared to CpHf(NMe2)(3). They have higher activation energies for thermolysis and lower activation energies for hydrolysis, as well as lower activation energies for serial ligand exchange reactions on the HfO2 surface.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2021)

添加到收藏夹

Article Nanoscience & Nanotechnology

Thermal Decomposition In Situ Monitoring System of the Gas Phase Cyclopentadienyl Tris(dimethylamino) Zirconium (CpZr(NMe2)3) Based on FT-IR and QMS for Atomic Layer Deposition

Jong-Ki An et al.

NANOSCALE RESEARCH LETTERS (2020)

添加到收藏夹

Article Engineering, Chemical

Detailed investigation of the surface mechanisms and their interplay with transport phenomena in alumina atomic layer deposition from TMA and water

Georgios P. Gakis et al.

CHEMICAL ENGINEERING SCIENCE (2019)

添加到收藏夹

Article Chemistry, Physical

A kinetic study of ZnO atomic layer deposition: Effects of surface hydroxyl concentration and steric hindrance

Sungjoon Kim et al.

APPLIED SURFACE SCIENCE (2019)

添加到收藏夹

Article Materials Science, Coatings & Films

Comparative study on the use of novel heteroleptic cyclopentadienyl-based zirconium precursors with H2O and O3 for atomic layer deposition of ZrO2

Sanni Seppala et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2019)

添加到收藏夹

Article Engineering, Chemical

Multiscale computational fluid dynamics modeling of thermal atomic layer deposition with application to chamber design

Yichi Zhang et al.

CHEMICAL ENGINEERING RESEARCH & DESIGN (2019)

添加到收藏夹

Review Physics, Applied

Conformality in atomic layer deposition: Current status overview of analysis and modelling

Veronique Cremers et al.

APPLIED PHYSICS REVIEWS (2019)

添加到收藏夹

Article Physics, Applied

Modeling growth kinetics of thin films made by atomic layer deposition in lateral high-aspect-ratio structures

Markku Ylilammi et al.

JOURNAL OF APPLIED PHYSICS (2018)

添加到收藏夹

Article Nanoscience & Nanotechnology

Compliance-Free ZrO2/ZrO2- x/ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour

Ruomeng Huang et al.

NANOSCALE RESEARCH LETTERS (2017)

添加到收藏夹

Article Nanoscience & Nanotechnology

Compliance-Free ZrO2/ZrO2- x/ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour

Ruomeng Huang et al.

NANOSCALE RESEARCH LETTERS (2017)

添加到收藏夹

Article Materials Science, Coatings & Films

New Zr-containing precursors for the atomic layer deposition of ZrO2

Keith Huynh et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2015)

添加到收藏夹

Article Materials Science, Coatings & Films

On the physical and chemical details of alumina atomic layer deposition: A combined experimental and numerical approach

Dongqing Pan et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2015)

添加到收藏夹

Article Materials Science, Multidisciplinary

Atomic layer deposition of ZrO2 thin film on Si(100) using {η5:η1-Cp(CH2)3NMe}Zr(NMe2)2/O3 as precursors

Jae-Sun Jung et al.

THIN SOLID FILMS (2015)

添加到收藏夹

Article Materials Science, Coatings & Films

Numerical modeling of carrier gas flow in atomic layer deposition vacuum reactor: A comparative study of lattice Boltzmann models

Dongqing Pan et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2014)

添加到收藏夹

Article Materials Science, Multidisciplinary

Influence of process parameters on atomic layer deposition of ZrO2 thin films from CpZr(NMe2)3 and H2O

Lauri Aarik et al.

THIN SOLID FILMS (2014)

添加到收藏夹

Article Chemistry, Physical

Hydroxylation of Metal-Supported Sheet-Like Silica Films

B. Yang et al.

JOURNAL OF PHYSICAL CHEMISTRY C (2013)

添加到收藏夹

Review Materials Science, Multidisciplinary

Growth, dielectric properties, and memory device applications of ZrO2 thin films

Debashis Panda et al.

THIN SOLID FILMS (2013)

添加到收藏夹

Article Chemistry, Physical

Novel mixed alkylamido-cyclopentadienyl precursors for ALD of ZrO2 thin films

Jaakko Niinisto et al.

JOURNAL OF MATERIALS CHEMISTRY (2008)

添加到收藏夹

Article Engineering, Electrical & Electronic

New TIT capacitor with ZrO2/Al2O3/ZrO2 dielectrics for 60 nm and below DRAMs

Ho Jin Cho et al.

SOLID-STATE ELECTRONICS (2007)

添加到收藏夹

Article Engineering, Electrical & Electronic

The high-k solution

Mark T. Bohr et al.

IEEE SPECTRUM (2007)

添加到收藏夹

Review Physics, Multidisciplinary

High dielectric constant gate oxides for metal oxide Si transistors

J Robertson

REPORTS ON PROGRESS IN PHYSICS (2006)

添加到收藏夹

Article Chemistry, Physical

First-principles molecular-dynamics investigation of the hydration mechanisms of the (0001) α-quartz surface

GM Rignanese et al.

PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2004)

添加到收藏夹

Article Electrochemistry

ZrO2 thin films grown on silicon substrates by atomic layer deposition with Cp2Zr(CH3)2 and water as precursors

M Putkonen et al.

CHEMICAL VAPOR DEPOSITION (2003)

添加到收藏夹

Article Chemistry, Physical

Atomic layer deposition of hafnium and zirconium oxides using metal amide precursors

DM Hausmann et al.

CHEMISTRY OF MATERIALS (2002)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.