Interfacial covalent bonding of Ni doped MoS2/TiO2/Ti3C2Tx composites for electromagnetic wave absorption performance

Two-dimensional MXene and its composites are among the most attractive electromagnetic wave absorption (EMA) materials due to their unique structure. While previous studies have investigated 2D/2D MoS2/Ti3C2Tx heterojunctions for EMA, there is still a need for further adjustments to interface structure to enhance polarized electron density and electron transfer capacity. In this study, Cl-Ti3C2Tx was prepared by Lewis acid molten salt etching of Ti3AlC2, and S-Ti3C2Tx was prepared by replacing Cl with S. MoS2 nanosheets were grown on the surface of S-Ti3C2Tx by a simple hydrothermal method, forming a Ti-S-Mo covalent interface. The EMA properties of the composites were further optimized by adjusting the interface oriented polarization and electronic structure through Ni doping. Compared to MoS2/TiO2/Ti3C2Tx, the electromagnetic wave absorption performance of NiMoS2/TiO2/Ti3C2Tx had been significantly improved. When the Ni doping amount was 0.086 mmol, the minimum reflection loss of Ni-MoS2/TiO2/Ti3C2Tx could reach -48.04 dB at 8.64 GHz, with an effective absorption bandwidth of 3.28 GHz. This study provides theoretical basis and experimental evidence for the follow-up research of MXene-based composite EMA materials.

Automated summary

In this study, Cl-Ti3C2Tx and S-Ti3C2Tx were prepared, and MoS2 nanosheets were grown on the surface of S-Ti3C2Tx. Ni doping was used to optimize the interface oriented polarization and electronic structure. The electromagnetic wave absorption performance of NiMoS2/TiO2/Ti3C2Tx was significantly improved compared to MoS2/TiO2/Ti3C2Tx.