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Article
Engineering, Electrical & Electronic
Hao-Kai Peng et al.
Summary: In this study, Zr-doped HfO2(HZO)-based germanium (Ge) p-channel ferroelectric FET (p-FeFET) memory devices are used to investigate the impact of gamma-ray radiation on device performance. The radiation dose of 1 Mrad results in the degradation of memory window (MW) from 2.5 V to 2.0 V and increased off-state current. The susceptibility of the interface between the gate dielectric and source/drain region leads to exacerbated charge trapping for the Ge substrate, causing the harmful radiation effect. However, the Ge p-FeFETs in this work demonstrate competitive anti-radiation capability compared to HfO2-based FeFET memories in previous studies.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Hao-Kai Peng et al.
Summary: HfZrOx-based p- and n-FeFETs with high-k AlON interfacial layer were used to evaluate the effects of gamma-rays radiation on memory performance and reliability. The results showed that the memory window and retention were hardly changed even with a radiation dose of 1 Mrad, thanks to the improved interfacial quality. In addition, p-FeFETs demonstrated higher endurance against radiation and improved read latency compared to n-FeFETs.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Zefu Zhao et al.
Summary: This study demonstrates that reducing the oxygen vacancy concentration and increasing the ZrO2-HfO2 interface area favor the formation of the ferroelectric orthorhombic phase, while increasing the oxygen vacancy concentration and decreasing the ZrO2-HfO2 interface area favor the formation of the anti-ferroelectric tetragonal phase. High remanent polarization and tunneling electroresistance ratio were achieved in metal-ferroelectric-metal superlattice structures, and a high dielectric constant was obtained in metal-insulator-metal capacitors with the ZrO2-HfO2 alloy.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Shan Deng et al.
Summary: The study reveals different charge trapping behaviors between nFeFETs and pFeFETs, with initial polarization states potentially exacerbating charge trapping, electron trapping being fully recoverable, and hole trapping showing a semi-permanent component.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Puyang Cai et al.
Summary: Through characterization and simulation, it is found that defects are localized during the bipolar stress cycling and play a significant role in the shift of E-c. The mismatch of work function and defect distribution affect the symmetry of E-c and the breakdown property. The shift of E-c is mainly attributed to the redistribution of defects from the ferroelectric phase to the non-ferroelectric phase and grain boundaries.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Multidisciplinary Sciences
Seunghun Kang et al.
Summary: This research reveals the origins and pathways to control ferroelectricity in hafnium oxide (HfO2)-based materials through local helium (He) implantation. It opens up possibilities for developing nanoengineered binary ferroelectrics.
Article
Nanoscience & Nanotechnology
Siwei Dai et al.
Summary: HfO2-based FeFETs show stability under radiation, but memory state degradation is caused by oxide trapped charges.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Engineering, Electrical & Electronic
Hao-Kai Peng et al.
Summary: By reducing the oxygen vacancy (Vo) in the HZO film through a high-quality SiNx interfacial layer, the FeFET memory achieves improved reliability and performance for MLC operation. It also successfully demonstrates stable threshold voltage (V-TH) for each state in TLC operation and desirable retention for QLC operation.
IEEE ELECTRON DEVICE LETTERS
(2022)
Proceedings Paper
Engineering, Multidisciplinary
Y. K. Chang et al.
Summary: This study comprehensively examines the endurance of Hf-based ferroelectric (FE) fatigue and breakdown mechanism under electric field (E-field) conditions. Under low E-field, reducing E-field worsens FE fatigue and constrains endurance without increasing SILC due to domain pinning. However, under high E-field stress, endurance is dominated by field accelerated breakdown caused by increased oxygen vacancy generation. Through a promising high frequency mixed-signal E-field operation, recoverable fatigue and prolonged cycle-to-breakdown are observed.
2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)
(2022)
Article
Engineering, Electrical & Electronic
Yu-Cheng Kao et al.
Summary: By utilizing X-ray diffraction and X-ray absorption spectroscopy, the crystal phases of polymorphic Hf1-xZrxO2 thin films under various preparation conditions were identified. The quantitative analysis showed that the monoclinic phase and the tetragonal phase are mutually exclusive, and a high fraction of orthorhombic phase can be achieved under specific process conditions. The observed correlation between phase fraction and in-plane strain proposed a strain-induced activation energy barrier to clarify the mechanism of the kinetic phase transition process. The endurance test indicated that the transition from tetragonal to orthorhombic phase might be a mechanism for the wake-up effect. Therefore, precisely controlling process parameters can efficiently optimize the strain in order to obtain highly pure orthorhombic Hf1-xZrxO2 thin films.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Dominik Kleimaier et al.
Summary: This study systematically compared p-type FeFETs based on HfO2 and n-type FeFETs embedded in GlobalFoundries 28 nm HKMG technology, finding that they exhibit similar switching behavior but significantly different trapping kinetics. P-FeFETs show a full memory window immediately after the write operation, while n-FeFETs exhibit parasitic electron trapping.
IEEE ELECTRON DEVICE LETTERS
(2021)
Review
Engineering, Electrical & Electronic
Jeffrey Prinzie et al.
Summary: This review examines the development and applications of radiation-hardened electronics, emphasizing the importance of operating in harsh radiation environments. It discusses the design methodologies for rad-hard integrated circuits and the potential of emerging memory technologies in rad-hard electronics.
NATURE ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Chen Liu et al.
Summary: The study showed that HZO thin films grown on HfO2 seed layer exhibited improved crystallinity and ferroelectricity compared to those grown directly on SiO2 thin film, leading to enhanced performance and radiation hardness of FeFETs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Nanoscience & Nanotechnology
Shuaidong Li et al.
ADVANCED ELECTRONIC MATERIALS
(2020)
Article
Engineering, Electrical & Electronic
Halid Mulaosmanovic et al.
IEEE ELECTRON DEVICE LETTERS
(2020)
Article
Engineering, Electrical & Electronic
Halid Mulaosmanovic et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Engineering, Electrical & Electronic
Monica Materano et al.
ACS APPLIED ELECTRONIC MATERIALS
(2020)
Article
Engineering, Electrical & Electronic
Binjian Zeng et al.
IEEE ELECTRON DEVICE LETTERS
(2019)
Article
Engineering, Electrical & Electronic
Kuen-Yi Chen et al.
IEEE ELECTRON DEVICE LETTERS
(2019)
Article
Physics, Multidisciplinary
David Z. Gao et al.
FRONTIERS IN PHYSICS
(2019)
Article
Engineering, Electrical & Electronic
Nanbo Gong et al.
IEEE ELECTRON DEVICE LETTERS
(2018)
Article
Engineering, Electrical & Electronic
Yan Wang et al.
IEEE ELECTRON DEVICE LETTERS
(2018)
Article
Chemistry, Multidisciplinary
Milan Pesic et al.
ADVANCED FUNCTIONAL MATERIALS
(2016)
Article
Engineering, Electrical & Electronic
J. S. Bi et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2013)
Article
Engineering, Electrical & Electronic
H. J. Barnaby
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2006)
